Manufacturer: Vishay
Win Source Part Number: 028716-SI9933CDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si9933CDY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 665pF @ 10V
Maximum Rds On at Id,Vgs: 58 mOhm @ 4.8A, 4.5V
Alternative Parts (Cross-Reference): FW111; TSM9933DCS RLG; TSM9933DCS RL; TSM9933DCS;
Introduction Date: August 08, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC
MOSFET 2P-CH 20V 4A 8-SOIC
2-Ch P-Ch JFET, 20V, 4A, 58mR RdsOn, SOP-8 Product overview: SI9933CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9933CDY-T1-GE3
MOSFET, PP-CH, 20V, 4A, SO8; Transistor Polarity:P Channel; Drain Source Voltage Vds:-20V; On Resistance Rds(on):48mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating RoHS Compliant: Yes
MOSFET, P CHANNEL, -20V, -4A, SOIC-8, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.075ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET 2P-CH 20V 4A 8SOIC
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028716-SI9933CDY-T1-GE3 | SI9933CDY-T1-GE3CT-ND | SI9933CDY-T1-GE3 | 278-SI9933CDY-T1-GE3 | 55R1932 | 15R5252 | SI9933CDY-T1-GE3 | SI9933CDY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9933CDY-T1-GE3 | FET, MOSFET Arrays | FET, MOSFET Arrays | 20V 4A MOSFET Transistor | Mosfet, Pp-Ch, 20V, 4A, So8; Transistor Polarity Vishay | Mosfet, P Channel, -20V, -4A, Soic-8, Full Reel; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| PD | 3100 milliwatts | 3100 milliwatts | 3100 milliwatts | |||||
| TJ | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | -50 C (-58 F) | |||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 |
