The Si9933CDY is a dual P-channel MOSFET in an SO-8 package designed for load switching and DC/DC conversion applications. It has a drain-source voltage rating of -20 V and a continuous drain current of -4 A at 25 °C, limited by the package. The on-state resistance is 0.058 Ω at -4.5 V gate-source voltage and 0.094 Ω at -2.5 V. The device is RoHS compliant and available in a halogen-free option. Maximum power dissipation is 2 W at 25 °C case temperature, with thermal resistance from junction to ambient of 52 °C/W typical. Operating junction and storage temperatures range from -50 °C to 150 °C.
MOSFET, P CHANNEL, -20V, -4A, SOIC-8, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.075ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC3354 |
| Product Name | Mosfet, P Channel, -20V, -4A, Soic-8, Full Reel; Transistor Polarity Vishay |
| Polarity | P-Channel |
