Vishay Precision Group FET, MOSFET Arrays SI9933CDY-T1-E3

Description
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC
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Description
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC
Request a Quote Datasheet

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Product
Description
Supplier Links
FET, MOSFET Arrays - SI9933CDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9933CDY-T1-E3TR-ND
FET, MOSFET Arrays SI9933CDY-T1-E3TR-ND
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC

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FET, MOSFET Arrays - SI9933CDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9933CDY-T1-E3CT-ND
FET, MOSFET Arrays SI9933CDY-T1-E3CT-ND
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC

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FET, MOSFET Arrays - SI9933CDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI9933CDY-T1-E3DKR-ND
FET, MOSFET Arrays SI9933CDY-T1-E3DKR-ND
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9933CDY-T1-E3 - 1096356-SI9933CDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9933CDY-T1-E3
1096356-SI9933CDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9933CDY-T1-E3 1096356-SI9933CDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096356-SI9933CDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 665pF @ 10V Maximum Rds On at Id,Vgs: 58 mOhm @ 4.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096356-SI9933CDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 665pF @ 10V
Maximum Rds On at Id,Vgs: 58 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

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Dual Mosfet, P-Ch, 20V, 4A, Soic; Transistor Polarity Vishay - 60AC3821 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, P-Ch, 20V, 4A, Soic; Transistor Polarity Vishay
60AC3821
Dual Mosfet, P-Ch, 20V, 4A, Soic; Transistor Polarity Vishay 60AC3821
DUAL MOSFET, P-CH, 20V, 4A, SOIC; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.048ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

DUAL MOSFET, P-CH, 20V, 4A, SOIC; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.048ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -20V Vds 12V Vgs SO-8

MOSFET -20V Vds 12V Vgs SO-8

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Transistor - 22272168 - Radwell International
Willingboro, NJ, United States
Transistor
22272168
Transistor 22272168
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI9933CDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI9933CDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI9933CDY-T1-E3
MOSFET 2P-CH 20V 4A 8SOIC

MOSFET 2P-CH 20V 4A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number SI9933CDY-T1-E3TR-ND 1096356-SI9933CDY-T1-E3 60AC3821 SI9933CDY-T1-E3 22272168 SI9933CDY-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9933CDY-T1-E3 Dual Mosfet, P-Ch, 20V, 4A, Soic; Transistor Polarity Vishay MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO TO-3
Polarity P-Channel
V(BR)DSS 20 volts
PD 3100 milliwatts
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