Manufacturer: Vishay
Win Source Part Number: 1096356-SI9933CDY-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 665pF @ 10V
Maximum Rds On at Id,Vgs: 58 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
N/P-Channel MOSFET 20V 4A 58mR SO Product overview: SI9933CDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9933CDY-T1-E3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC
DUAL MOSFET, P-CH, 20V, 4A, SOIC; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.048ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2P-CH 20V 4A 8SOIC
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096356-SI9933CDY-T1-E3 | 278-SI9933CDY-T1-E3 | SI9933CDY-T1-E3TR-ND | 60AC3821 | SI9933CDY-T1-E3 | SI9933CDY-T1-E3 | 22272168 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9933CDY-T1-E3 | P-Channel 20V 4A MOSFET Transistor | FET, MOSFET Arrays | Dual Mosfet, P-Ch, 20V, 4A, Soic; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor |
| Polarity | P-Channel | P-Channel | |||||
| V(BR)DSS | 20 volts | ||||||
| PD | 3100 milliwatts | 3100 milliwatts | |||||
| TJ | -50 to 150 C (-58 to 302 F) | -50 C (-58 F) |
