Manufacturer: Vishay
Win Source Part Number: 113795-SI9933BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.6A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Maximum Rds On at Id,Vgs: 60 mOhm @ 4.7A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Mosfet Array 2 P-Channel (Dual) 20V 3.6A 1.1W Surface Mount 8-SOIC
MOSFET 2P-CH 20V 3.6A 8SOIC Product overview: SI9933BDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI9933BDY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 3.6A 8SOIC
MOSFET 2P-CH 20V 3.6A 8-SOIC
DISCONTINUED BY MANUFACTURER, SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.6A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Radwell International | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 113795-SI9933BDY-T1-E3 | SI9933BDY-T1-E3TR-ND | 289-SI9933BDY-T1-E3 | SI9933BDY-T1-E3 | 880-SI9933BDY-T1-E3 | 22272164 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9933BDY-T1-E3 | FET, MOSFET Arrays | 20V 3.6A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 2P-CH 20V 3.6A 8-SOIC | Transistor |
| Polarity | P-Channel | |||||
| V(BR)DSS | 20 volts | -20 volts | ||||
| PD | 1100 milliwatts | 1100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
