Vishay Intertechnology, Inc. 30V 4.1A SOIC MOSFET Transistor SI9435BDY-TI-E3

Description
MOSFET P-CH 30V 4.1A 8-SOIC Product overview: SI9435BDY-TI-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9435BDY-TI-E3 can be used for catalog matching and distributor lookup.
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Description
MOSFET P-CH 30V 4.1A 8-SOIC Product overview: SI9435BDY-TI-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9435BDY-TI-E3 can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The Si9435BDY is a P-channel 30 V MOSFET in an SO-8 package, designed for power switching applications. It has a continuous drain current of -5.7 A at 25°C and -4.5 A at 70°C, with drain-source on-state resistance of 0.042 Ω at -10 V gate-source voltage and 0.055 Ω at -6 V. The device meets RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. It operates with a junction temperature range of -55°C to 150°C and has a typical junction-to-ambient thermal resistance of 70 °C/W when surface-mounted on a 1" x 1" FR4 board. The package dimensions conform to JEDEC MS-012 standards.

Datasheet Summary
Powered by GS/AI

The Si9435BDY is a P-channel 30 V MOSFET in an SO-8 package, designed for power switching applications. It has a continuous drain current of -5.7 A at 25°C and -4.5 A at 70°C, with drain-source on-state resistance of 0.042 Ω at -10 V gate-source voltage and 0.055 Ω at -6 V. The device meets RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. It operates with a junction temperature range of -55°C to 150°C and has a typical junction-to-ambient thermal resistance of 70 °C/W when surface-mounted on a 1" x 1" FR4 board. The package dimensions conform to JEDEC MS-012 standards.

Suppliers

Company
Product
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Singapore, Singapore
30V 4.1A SOIC MOSFET Transistor
278-SI9435BDY-TI-E3
30V 4.1A SOIC MOSFET Transistor 278-SI9435BDY-TI-E3
MOSFET P-CH 30V 4.1A 8-SOIC Product overview: SI9435BDY-TI-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9435BDY-TI-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 4.1A 8-SOIC Product overview: SI9435BDY-TI-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9435BDY-TI-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SI9435BDY-TI-E3
Product Name 30V 4.1A SOIC MOSFET Transistor
TJ -55 to 150 C (-67 to 302 F)
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