Manufacturer: Vishay
Win Source Part Number: 028713-SI9435BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Family Name: Si9435BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 5.7A, 10V
Alternative Parts (Cross-Reference): TSM9435CS RF; RSH050P03TB; TSM9435CS RL;
Introduction Date: June 16, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
P-Channel 30V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
P-Channel 30V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
P-Channel 30V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
P-Channel JFET, 30V, 4.1A, 42mR Rds On, SOP-8 Product overview: SI9435BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9435BDY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 4.1A 8SO
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:2.5W RoHS Compliant: Yes
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Product Range:- RoHS Compliant: Yes
MOSFET P-CH 30V 4.1A 8SO
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028713-SI9435BDY-T1-E3 | SI9435BDY-T1-E3DKR-ND | 278-SI9435BDY-T1-E3 | SI9435BDY-T1-E3 | SI9435BDY-T1-E3 | 06J8231 | 35K3498 | SI9435BDY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9435BDY-T1-E3 | Single FETs, MOSFETs | P-Channel 30V 4.1A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | P Channel Mosfet; Channel Type Vishay | P Channel Mosfet, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 1300 milliwatts | 2500 milliwatts | 1300 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
