Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9410BDY-T1-GE3 SI9410BDY-T1-GE3

Manufacturer: Vishay Win Source Part Number: 131776-SI9410BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 23nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 8.1A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited