Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9410BDY-T1-E3 SI9410BDY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028712-SI9410BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Family Name: Si9410BDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 23nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 8.1A, 10V Alternative Parts (Cross-Reference): TSM4414CS; TSM4414CS RL; AO4404B; Introduction Date: July 01, 2003 ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028712-SI9410BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Family Name: Si9410BDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 23nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 8.1A, 10V Alternative Parts (Cross-Reference): TSM4414CS; TSM4414CS RL; AO4404B; Introduction Date: July 01, 2003 ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9410BDY-T1-E3 - 028712-SI9410BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9410BDY-T1-E3
028712-SI9410BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9410BDY-T1-E3 028712-SI9410BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028712-SI9410BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Family Name: Si9410BDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 23nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 8.1A, 10V Alternative Parts (Cross-Reference): TSM4414CS; TSM4414CS RL; AO4404B; Introduction Date: July 01, 2003 ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028712-SI9410BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Family Name: Si9410BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 23nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 8.1A, 10V
Alternative Parts (Cross-Reference): TSM4414CS; TSM4414CS RL; AO4404B;
Introduction Date: July 01, 2003
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
30V 6.2A MOSFET Transistor
278-SI9410BDY-T1-E3
30V 6.2A MOSFET Transistor 278-SI9410BDY-T1-E3
MOSFET N-CH 30V 6.2A 8SO Product overview: SI9410BDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9410BDY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 6.2A 8SO Product overview: SI9410BDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9410BDY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - SI9410BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI9410BDY-T1-E3
Single FETs, MOSFETs SI9410BDY-T1-E3
MOSFET N-CH 30V 6.2A 8SO

MOSFET N-CH 30V 6.2A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI9410BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI9410BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI9410BDY-T1-E3
MOSFET N-CH 30V 6.2A 8SO

MOSFET N-CH 30V 6.2A 8SO

Supplier's Site
Transistor - 22272068 - Radwell International
Willingboro, NJ, United States
Transistor
22272068
Transistor 22272068
DISCONTINUED BY MANUFACTURER, MOSFET, N-CHANNEL, 30V, 6.2A (TA), 1.5W (TA), SMD, 8-SOIC, 9410B MARKING. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, MOSFET, N-CHANNEL, 30V, 6.2A (TA), 1.5W (TA), SMD, 8-SOIC, 9410B MARKING. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 028712-SI9410BDY-T1-E3 278-SI9410BDY-T1-E3 SI9410BDY-T1-E3 SI9410BDY-T1-E3 22272068
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9410BDY-T1-E3 30V 6.2A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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