Manufacturer: Vishay
Win Source Part Number: 028712-SI9410BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Family Name: Si9410BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 23nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 8.1A, 10V
Alternative Parts (Cross-Reference): TSM4414CS; TSM4414CS RL; AO4404B;
Introduction Date: July 01, 2003
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 6.2A 8SO Product overview: SI9410BDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9410BDY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 6.2A 8SO
MOSFET N-CH 30V 6.2A 8SO
DISCONTINUED BY MANUFACTURER, MOSFET, N-CHANNEL, 30V, 6.2A (TA), 1.5W (TA), SMD, 8-SOIC, 9410B MARKING. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 028712-SI9410BDY-T1-E3 | 278-SI9410BDY-T1-E3 | SI9410BDY-T1-E3 | SI9410BDY-T1-E3 | 22272068 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9410BDY-T1-E3 | 30V 6.2A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |