P-Channel 60V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-Channel 60V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-Channel 60V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-CH JFET, 60V, 3.2A, 120mR, SOIC-8, Surface Mount Product overview: SI9407BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 3.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 3.2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9407BDY-T1-GE3
MOSFET P-CH 60V 4.7A 8SO
Manufacturer: Vishay
Win Source Part Number: 028711-SI9407BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Family Name: Si9407BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.7A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 600pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): ZXMP6A17N8; ZXMP6A17N8TC; BSO613SPV G;
Introduction Date: February 04, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W RoHS Compliant: Yes
MOSFET Transistor, P Channel, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V RoHS Compliant: Yes
MOSFET P-CH 60V 4.7A 8SO
TRANSISTOR, P CHANNEL MOSFET, -60V, 4.7A, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 150mohm, Id 4.7A, SO-8, Pd 5W
MOSFET P-CH 60V 4.7A 8-SOIC
60V 4.7A 2.4W 120mΩ@10V,3.2A 3V@250uA P Channel SOIC-8_150mil MOSFETs ROHS
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | Allied Electronics, Inc. | Utmel Electronic Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI9407BDY-T1-GE3DKR-ND | 8181444 | 8181444P | 278-SI9407BDY-T1-GE3 | SI9407BDY-T1-GE3 | 028711-SI9407BDY-T1-GE3 | 29X0553 | 47Y1313 | SI9407BDY-T1-GE3 | SI9407BDY-T1-GE3 | 22272064 | 70026452 | 880-SI9407BDY-T1-GE3 | 17930-SI9407BDY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | SMD 60V 3.2A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-GE3 | Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type Vishay | Mosfet Transistor, P Channel, -4.7 A, -60 V, 0.1 Ohm, -10 V, -3 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor | MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 150mohm, Id 4.7A, SO-8, Pd 5W | MOSFET P-CH 60V 4.7A 8-SOIC | 60V 4.7A 2.4W 120mΩ@10V,3.2A 3V@250uA P Channel SOIC-8_150mil MOSFETs ROHS |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Soic | SOIC | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||||||||
| Number of units in IC | 1 | 1 | ||||||||||||
| PD | 5000 milliwatts | 2400 milliwatts | 2400 to 5000 milliwatts | 5000 milliwatts | 2400 milliwatts |
