Vishay Intertechnology, Inc. Transistor SI9407BDY-T1-E3

Description
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.7A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
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Description
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.7A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 48969210 - Radwell International
Willingboro, NJ, United States
Transistor
48969210
Transistor 48969210
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.7A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.7A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - SI9407BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI9407BDY-T1-E3
Single FETs, MOSFETs SI9407BDY-T1-E3
MOSFET P-CH 60V 4.7A 8SO

MOSFET P-CH 60V 4.7A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3 - 1096347-SI9407BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3
1096347-SI9407BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3 1096347-SI9407BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096347-SI9407BDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Family Name: Si9407BDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 600pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): NDS9407-D84Z; NDS9407-Q; NDS9407-F095; TSM9409CS RF; Introduction Date: February 04, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1096347-SI9407BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Family Name: Si9407BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.7A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 600pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): NDS9407-D84Z; NDS9407-Q; NDS9407-F095; TSM9409CS RF;
Introduction Date: February 04, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI9407BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI9407BDY-T1-E3TR-ND
Single FETs, MOSFETs SI9407BDY-T1-E3TR-ND
P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI9407BDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI9407BDY-T1-E3CT-ND
Single FETs, MOSFETs SI9407BDY-T1-E3CT-ND
P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI9407BDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI9407BDY-T1-E3DKR-ND
Single FETs, MOSFETs SI9407BDY-T1-E3DKR-ND
P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET -60V Vds 20V Vgs SO-8

MOSFET -60V Vds 20V Vgs SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI9407BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI9407BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI9407BDY-T1-E3
MOSFET P-CH 60V 4.7A 8SO

MOSFET P-CH 60V 4.7A 8SO

Supplier's Site

Technical Specifications

  Radwell International ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 48969210 SI9407BDY-T1-E3 1096347-SI9407BDY-T1-E3 SI9407BDY-T1-E3TR-ND SI9407BDY-T1-E3 SI9407BDY-T1-E3
Product Name Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 4700 milliamps
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