Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3 SI9407BDY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096347-SI9407BDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Family Name: Si9407BDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 600pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): NDS9407-D84Z; NDS9407-Q; NDS9407-F095; TSM9409CS RF; Introduction Date: February 04, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 1096347-SI9407BDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Family Name: Si9407BDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 600pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): NDS9407-D84Z; NDS9407-Q; NDS9407-F095; TSM9409CS RF; Introduction Date: February 04, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3 - 1096347-SI9407BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3
1096347-SI9407BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3 1096347-SI9407BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096347-SI9407BDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Family Name: Si9407BDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 600pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): NDS9407-D84Z; NDS9407-Q; NDS9407-F095; TSM9409CS RF; Introduction Date: February 04, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1096347-SI9407BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Family Name: Si9407BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.7A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 600pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): NDS9407-D84Z; NDS9407-Q; NDS9407-F095; TSM9409CS RF;
Introduction Date: February 04, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 48969210 - Radwell International
Willingboro, NJ, United States
Transistor
48969210
Transistor 48969210
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.7A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.7A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - SI9407BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI9407BDY-T1-E3TR-ND
Single FETs, MOSFETs SI9407BDY-T1-E3TR-ND
P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI9407BDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI9407BDY-T1-E3CT-ND
Single FETs, MOSFETs SI9407BDY-T1-E3CT-ND
P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI9407BDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI9407BDY-T1-E3DKR-ND
Single FETs, MOSFETs SI9407BDY-T1-E3DKR-ND
P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI9407BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI9407BDY-T1-E3
Single FETs, MOSFETs SI9407BDY-T1-E3
MOSFET P-CH 60V 4.7A 8SO

MOSFET P-CH 60V 4.7A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI9407BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI9407BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI9407BDY-T1-E3
MOSFET P-CH 60V 4.7A 8SO

MOSFET P-CH 60V 4.7A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -60V Vds 20V Vgs SO-8

MOSFET -60V Vds 20V Vgs SO-8

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Technical Specifications

  Win Source Electronics Radwell International DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096347-SI9407BDY-T1-E3 48969210 SI9407BDY-T1-E3TR-ND SI9407BDY-T1-E3 SI9407BDY-T1-E3 SI9407BDY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3 Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 60 volts 60 volts
PD 2400 to 5000 milliwatts 5000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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