Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407BDY-T1-E3 SI9407BDY-T1-E3

Manufacturer: Vishay
Win Source Part Number: 1096347-SI9407BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Family Name: Si9407BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.7A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 600pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): NDS9407-D84Z; NDS9407-Q; NDS9407-F095; TSM9409CS RF;
Introduction Date: February 04, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

P-CH MOSFET 60V 3.2A 120mR SOIC N Tape & Reel Product overview: SI9407BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.2A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI9407BDY-T1-E3 can be used for catalog matching and distributor lookup.

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P-Channel 60V 4.7A (Tc) 5W (Tc) Surface Mount 8-SOIC