Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407AEY-T1-GE3 SI9407AEY-T1-GE3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1093010-SI9407AEY-T1 -GE3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -60 V Weight: 506.605978 mg Resistance: 120 mΩ Number of Channels: 1 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 3 W Continuous Drain Current (ID): 3.5 A Drain to Source Resistance: 120 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote
Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1093010-SI9407AEY-T1 -GE3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -60 V Weight: 506.605978 mg Resistance: 120 mΩ Number of Channels: 1 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 3 W Continuous Drain Current (ID): 3.5 A Drain to Source Resistance: 120 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407AEY-T1-GE3 - 1093010-SI9407AEY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407AEY-T1-GE3
1093010-SI9407AEY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407AEY-T1-GE3 1093010-SI9407AEY-T1-GE3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1093010-SI9407AEY-T1 -GE3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -60 V Weight: 506.605978 mg Resistance: 120 mΩ Number of Channels: 1 Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 3 W Continuous Drain Current (ID): 3.5 A Drain to Source Resistance: 120 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1093010-SI9407AEY-T1-GE3
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): -60 V
Weight: 506.605978 mg
Resistance: 120 mΩ
Number of Channels: 1
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SO
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 3 W
Continuous Drain Current (ID): 3.5 A
Drain to Source Resistance: 120 mΩ
Gate to Source Voltage (Vgs): 20 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1093010-SI9407AEY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9407AEY-T1-GE3
Package Type SOT3; SO
Unlock Full Specs
to access all available technical data