Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8902EDB-T2-E1 SI8902EDB-T2-E1

Description
Manufacturer: Vishay Win Source Part Number: 028709-SI8902EDB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.9A Gate-Source Threshold Voltage: 1V @ 980μA Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 028709-SI8902EDB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.9A Gate-Source Threshold Voltage: 1V @ 980μA Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8902EDB-T2-E1 - 028709-SI8902EDB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8902EDB-T2-E1
028709-SI8902EDB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8902EDB-T2-E1 028709-SI8902EDB-T2-E1
Manufacturer: Vishay Win Source Part Number: 028709-SI8902EDB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.9A Gate-Source Threshold Voltage: 1V @ 980μA Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028709-SI8902EDB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-Micro Foot
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.9A
Gate-Source Threshold Voltage: 1V @ 980μA
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 20V 5.0A 1.7W 45mohm @ 4.5V

MOSFET 20V 5.0A 1.7W 45mohm @ 4.5V

Buy Now Datasheet
MOSFET 2N-CH 20V 3.9A 6-MFP - 880-SI8902EDB-T2-E1 - Utmel Electronic Limited
Hong Kong, China
MOSFET 2N-CH 20V 3.9A 6-MFP
880-SI8902EDB-T2-E1
MOSFET 2N-CH 20V 3.9A 6-MFP 880-SI8902EDB-T2-E1
MOSFET 2N-CH 20V 3.9A 6-MFP

MOSFET 2N-CH 20V 3.9A 6-MFP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8902EDB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8902EDB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8902EDB-T2-E1
MOSFET 2N-CH 20V 3.9A 6MICROFOOT

MOSFET 2N-CH 20V 3.9A 6MICROFOOT

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028709-SI8902EDB-T2-E1 SI8902EDB-T2-E1 880-SI8902EDB-T2-E1 SI8902EDB-T2-E1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8902EDB-T2-E1 MOSFET MOSFET 2N-CH 20V 3.9A 6-MFP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 20 volts 20 volts
PD 1000 milliwatts 1700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 6-Micro Foot
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