MOSFET 2N-CH 20V 3.9A 6-MFP Product overview: SI8902EDB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8902EDB-T2-E1 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028709-SI8902EDB-T2-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-Micro Foot
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.9A
Gate-Source Threshold Voltage: 1V @ 980μA
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 20V 3.9A 6-MFP
MOSFET 20V 5.0A 1.7W 45mohm @ 4.5V
MOSFET 2N-CH 20V 3.9A 6MICROFOOT
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI8902EDB-T2-E1 | 028709-SI8902EDB-T2-E1 | 880-SI8902EDB-T2-E1 | SI8902EDB-T2-E1 | SI8902EDB-T2-E1 |
| Product Name | 20V 3.9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8902EDB-T2-E1 | MOSFET 2N-CH 20V 3.9A 6-MFP | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |||
| PD | 1000 milliwatts | 1000 milliwatts | 1700 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| V(BR)DSS | 20 volts | 20 volts | |||
| Package Type | SOT3; 6-Micro Foot |
