Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI8821EDB-T2-E1

Win Source Part Number: 1277577-SI8821EDB-T2-E1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Other Names: SI8821EDB-T2-E1CT,SI8821EDB-T2-E1TR,SI8821EDB-T2-E1DKR
Base Product Number: SI8821
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

P-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

P-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

P-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount 4-Microfoot