Vishay Intertechnology, Inc. P-Channel MOSFET Transistor SI8819EDB-T2-E1

MOSFET P-Channel 12-V (D-S) Product overview: SI8819EDB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8819EDB-T2-E1 can be used for catalog matching and distributor lookup.

Win Source Part Number: 981720-SI8819EDB-T2-E1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Package / Case: 4-XFBGA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Other Names: SI8819EDB-T2-E1-ND,SI8819EDB-T2-E1TR,SI8819EDB-T2-E1DKR,SI8819EDB-T2-E1CT
Base Product Number: SI8819
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V