Small Signal Field-Effect Transistor Product overview: SI8816EDB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8816EDB-T2-E1 can be used for catalog matching and distributor lookup.
N-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Win Source Part Number: 1277585-SI8816EDB-T2
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Package / Case: 4-XFBGA
Supplier Device Package: 4-Microfoot
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Other Names: SI8816EDB-T2-E1CT,SI
Base Product Number: SI8816
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
MOSFET 30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
MOSFET N-CH 30V 4MICROFOOT
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI8816EDB-T2-E1 | SI8816EDB-T2-E1DKR-ND | 1277585-SI8816EDB-T2-E1 | SI8816EDB-T2-E1 | SI8816EDB-T2-E1 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel |
