Vishay Intertechnology, Inc. 20V MOSFET Transistor SI8812DB-T2-E1

MOSFET N-CH 20V MICROFOOT Product overview: SI8812DB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8812DB-T2-E1 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1107364-SI8812DB-T2-E1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Package / Case: 4-UFBGA
Supplier Device Package: 4-Microfoot
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Vgs (Max): ±5V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Other Names: SI8812DBT2E1,SI8812DB-T2-E1TR,SI8812DB-T2-E1DKR,SI8812DB-T2-E1CT
Base Product Number: SI8812
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V

MOSFET N-CH 20V 4MICROFOOT

N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot