Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI8809EDB-T2-E1

Win Source Part Number: 970249-SI8809EDB-T2- E1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.94 (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 500mW (Ta) Package / Case: 4-XFBGA Supplier Device Package: 4-Microfoot Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Vishay Siliconix Base Product Number: SI8809 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V