Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI8809EDB-T2-E1

Win Source Part Number: 970249-SI8809EDB-T2-E1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 1.94 (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 500mW (Ta)
Package / Case: 4-XFBGA
Supplier Device Package: 4-Microfoot
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Base Product Number: SI8809
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

MOSFET P-CH 20V 1.9A MICROFOOT Product overview: SI8809EDB-T2-E1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8809EDB-T2-E1 can be used for catalog matching and distributor lookup.