Manufacturer: Vishay
Win Source Part Number: 1096330-SI8808DB-T2-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-UFBGA
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 10nC @ 8V
Max Input Capacitance: 330pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 95 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
N-Channel 30V 1.8A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 30V 1.8A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 30V 1.8A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
MOSFET N-CH 30V 4MICROFOOT
MOSFET N-CH 30V 4MICROFOOT
MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096330-SI8808DB-T2-E1 | SI8808DB-T2-E1TR-ND | SI8808DB-T2-E1 | SI8808DB-T2-E1 | SI8808DB-T2-E1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8808DB-T2-E1 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 500 milliwatts | 500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
