Vishay Precision Group Single FETs, MOSFETs SI8805EDB-T2-E1

Description
P-Channel 8V 2.2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Request a Quote Datasheet
Description
P-Channel 8V 2.2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - SI8805EDB-T2-E1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8805EDB-T2-E1TR-ND
Single FETs, MOSFETs SI8805EDB-T2-E1TR-ND
P-Channel 8V 2.2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

P-Channel 8V 2.2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8805EDB-T2-E1 - 1096329-SI8805EDB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8805EDB-T2-E1
1096329-SI8805EDB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8805EDB-T2-E1 1096329-SI8805EDB-T2-E1
Manufacturer: Vishay Win Source Part Number: 1096329-SI8805EDB-T2 -E1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA Drain-Source Breakdown Voltage: 8V Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 10nC @ 4.5V Maximum Gate-Source Voltage: ±5V Maximum Rds On at Id,Vgs: 68 mOhm @ 1.5A, 4.5V Alternative Parts (Cross-Reference): Si8823EDB-T2-E1; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096329-SI8805EDB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA
Drain-Source Breakdown Voltage: 8V
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 10nC @ 4.5V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 68 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): Si8823EDB-T2-E1;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8805EDB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8805EDB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8805EDB-T2-E1
MOSFET P-CH 8V 4MICROFOOT

MOSFET P-CH 8V 4MICROFOOT

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI8805EDB-T2-E1TR-ND 1096329-SI8805EDB-T2-E1 SI8805EDB-T2-E1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8805EDB-T2-E1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type 4-XFBGA, CSPBGA SOT3; 4-Microfoot 4-XFBGA, CSPBGA
V(BR)DSS 8 volts
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