MOSFET N-CH 8V 4MICROFOOT
N-Ch MOSFET MFOOT 1x1 8V 80mohm @ 4.5V
N-Ch MOSFET MFOOT 1x1 8V 80mohm @ 4.5V
N-Ch MOSFET MFOOT 1x1 8V 80mohm @ 4.5V
N-Channel 8V 3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 8V 3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 8V 3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-CH MOSFET 8V 3.5A 44mR BGA Surface Mount Product overview: SI8802DB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 8V, 3.5A, BGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 8V, 3.5A, BGA, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8802DB-T2-E1 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 794380-SI8802DB-T2-E
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 4-XFBGA
Mounting: SMD
Technology: MOSFET
Family Name: Si8802DB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Manufacturer Package: 4-Microfoot
Channel Type Type: N
Drain Source Voltage: 8V
Vgs(th) (Maximum) @ Id: 700mV @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 6.5nC @ 4.5V
Vgs (Maximum): ±5V
Power Dissipation (Maximum): 500mW (Ta)
Rds On (Maximum) @ Id, Vgs: 54 mOhm @ 1A, 4.5V
Introduction Date: July 28, 2011
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
MicroFoot-4 MOSFETs ROHS
MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
MOSFET, N CHANNEL, 8V, 3.5A, MICRO FOOT-4; Channel Type:N Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:3.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:350mV RoHS Compliant: Yes
MOSFET, N-CH, 8V, 3.5A, MICRO FOOT ROHS COMPLIANT: YES
MOSFET, N-CH, 8V, 3.5A, MICRO FOOT-4, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:3.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:900mW RoHS Compliant: Yes
MOSFET N-CH 8V 4MICROFOOT
| ODG (Origin Data Global) | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI8802DB-T2-E1 | 1807328 | SI8802DB-T2-E1DKR-ND | 278-SI8802DB-T2-E1 | 794380-SI8802DB-T2-E1 | 17930-SI8802DB-T2-E1 | SI8802DB-T2-E1 | 04X9769 | 57AJ0478 | 99W9639 | SI8802DB-T2-E1 |
| Product Name | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | SMD 8V 3.5A BGA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8802DB-T2-E1 | MicroFoot-4 MOSFETs ROHS | MOSFET | Mosfet, N Channel, 8V, 3.5A, Micro Foot-4; Channel Type Vishay | Mosfet, N-Ch, 8V, 3.5A, Micro Foot Rohs Compliant Vishay | Mosfet, N-Ch, 8V, 3.5A, Micro Foot-4, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 8 volts | ||||||||||
| IDSS | 3000 milliamps | 3500 milliamps | 3500 milliamps |
