Vishay Precision Group Single FETs, MOSFETs SI8800EDB-T2-E1

N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

N-CH JFET 20V 2.8A 80mR Surface Mount Product overview: SI8800EDB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8800EDB-T2-E1 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 028708-SI8800EDB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: Si8800EDB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 8.3nC @ 8V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 80 mOhm @ 1A, 4.5V
Alternative Parts (Cross-Reference): RQK0203SGDQATL-H; DMN2112SN; S-90N0212SMA-TF; QS5U36TR;
Introduction Date: April 29, 2010
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient