Vishay Precision Group Single FETs, MOSFETs SI8800EDB-T2-E1

Description
MOSFET N-CH 20V 4MICROFOOT
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Description
MOSFET N-CH 20V 4MICROFOOT
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI8800EDB-T2-E1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI8800EDB-T2-E1
Single FETs, MOSFETs SI8800EDB-T2-E1
MOSFET N-CH 20V 4MICROFOOT

MOSFET N-CH 20V 4MICROFOOT

Supplier's Site Datasheet
Single FETs, MOSFETs - SI8800EDB-T2-E1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8800EDB-T2-E1CT-ND
Single FETs, MOSFETs SI8800EDB-T2-E1CT-ND
N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

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Single FETs, MOSFETs - SI8800EDB-T2-E1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8800EDB-T2-E1TR-ND
Single FETs, MOSFETs SI8800EDB-T2-E1TR-ND
N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

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Single FETs, MOSFETs - SI8800EDB-T2-E1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8800EDB-T2-E1DKR-ND
Single FETs, MOSFETs SI8800EDB-T2-E1DKR-ND
N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8800EDB-T2-E1 - 028708-SI8800EDB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8800EDB-T2-E1
028708-SI8800EDB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8800EDB-T2-E1 028708-SI8800EDB-T2-E1
Manufacturer: Vishay Win Source Part Number: 028708-SI8800EDB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: Si8800EDB Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA, CSPBGA Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.3nC @ 8V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 80 mOhm @ 1A, 4.5V Alternative Parts (Cross-Reference): RQK0203SGDQATL-H; DMN2112SN; S-90N0212SMA-TF; QS5U36TR; Introduction Date: April 29, 2010 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028708-SI8800EDB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: Si8800EDB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 8.3nC @ 8V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 80 mOhm @ 1A, 4.5V
Alternative Parts (Cross-Reference): RQK0203SGDQATL-H; DMN2112SN; S-90N0212SMA-TF; QS5U36TR;
Introduction Date: April 29, 2010
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

Buy Now Datasheet
MicroFoot-4 MOSFETs ROHS - 17930-SI8800EDB-T2-E1 - Utmel Electronic Limited
Hong Kong, China
MicroFoot-4 MOSFETs ROHS
17930-SI8800EDB-T2-E1
MicroFoot-4 MOSFETs ROHS 17930-SI8800EDB-T2-E1
MicroFoot-4 MOSFETs ROHS

MicroFoot-4 MOSFETs ROHS

Supplier's Site
Mosfet, N Channel, 20V, 2.8A, Micro Foot-4; Channel Type Vishay - 69W7244 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 20V, 2.8A, Micro Foot-4; Channel Type Vishay
69W7244
Mosfet, N Channel, 20V, 2.8A, Micro Foot-4; Channel Type Vishay 69W7244
MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mVRoHS Compliant: Yes

MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mVRoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 20V, 2.8A, Micro Foot-4, Full Reel; Channel Type Vishay - 86R3936 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 20V, 2.8A, Micro Foot-4, Full Reel; Channel Type Vishay
86R3936
Mosfet, N Channel, 20V, 2.8A, Micro Foot-4, Full Reel; Channel Type Vishay 86R3936
MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:900mW RoHS Compliant: Yes

MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:900mW RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8800EDB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8800EDB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8800EDB-T2-E1
MOSFET N-CH 20V 4MICROFOOT

MOSFET N-CH 20V 4MICROFOOT

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI8800EDB-T2-E1 SI8800EDB-T2-E1CT-ND 028708-SI8800EDB-T2-E1 SI8800EDB-T2-E1 17930-SI8800EDB-T2-E1 69W7244 86R3936 SI8800EDB-T2-E1
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8800EDB-T2-E1 MOSFET MicroFoot-4 MOSFETs ROHS Mosfet, N Channel, 20V, 2.8A, Micro Foot-4; Channel Type Vishay Mosfet, N Channel, 20V, 2.8A, Micro Foot-4, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 2000 milliamps 2800 milliamps 2800 milliamps
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