N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
MOSFET N-CH 20V 4MICROFOOT
Manufacturer: Vishay
Win Source Part Number: 028708-SI8800EDB-T2-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: Si8800EDB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 8.3nC @ 8V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 80 mOhm @ 1A, 4.5V
Alternative Parts (Cross-Reference): RQK0203SGDQATL-H; DMN2112SN; S-90N0212SMA-TF; QS5U36TR;
Introduction Date: April 29, 2010
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
MicroFoot-4 MOSFETs ROHS
MOSFET N-CH 20V 4MICROFOOT
MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mVRoHS Compliant: Yes
MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:900mW RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI8800EDB-T2-E1CT-ND | SI8800EDB-T2-E1 | 028708-SI8800EDB-T2-E1 | 17930-SI8800EDB-T2-E1 | SI8800EDB-T2-E1 | SI8800EDB-T2-E1 | 69W7244 | 86R3936 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8800EDB-T2-E1 | MicroFoot-4 MOSFETs ROHS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 20V, 2.8A, Micro Foot-4; Channel Type Vishay | Mosfet, N Channel, 20V, 2.8A, Micro Foot-4, Full Reel; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | 4-XFBGA, CSPBGA | 4-XFBGA, CSPBGA | SOT3; 4-Microfoot | 4-XFBGA, CSPBGA | TO-3 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts |
