Manufacturer: Vishay
Win Source Part Number: 028708-SI8800EDB-T2-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: Si8800EDB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 8.3nC @ 8V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 80 mOhm @ 1A, 4.5V
Alternative Parts (Cross-Reference): RQK0203SGDQATL-H; DMN2112SN; S-90N0212SMA-TF; QS5U36TR;
Introduction Date: April 29, 2010
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
N-CH JFET 20V 2.8A 80mR Surface Mount Product overview: SI8800EDB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8800EDB-T2-E1 can be used for catalog matching and distributor lookup.
N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
MicroFoot-4 MOSFETs ROHS
MOSFET N-CH 20V 4MICROFOOT
MOSFET N-CH 20V 4MICROFOOT
MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mVRoHS Compliant: Yes
MOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:900mW RoHS Compliant: Yes
MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028708-SI8800EDB-T2-E1 | 278-SI8800EDB-T2-E1 | SI8800EDB-T2-E1CT-ND | 17930-SI8800EDB-T2-E1 | SI8800EDB-T2-E1 | SI8800EDB-T2-E1 | 69W7244 | 86R3936 | SI8800EDB-T2-E1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8800EDB-T2-E1 | SMD 20V 2.8A MOSFET Transistor | Single FETs, MOSFETs | MicroFoot-4 MOSFETs ROHS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Channel, 20V, 2.8A, Micro Foot-4; Channel Type Vishay | Mosfet, N Channel, 20V, 2.8A, Micro Foot-4, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | 900 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
