Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1 SI8499DB-T2-E1

Description
Manufacturer: Vishay Win Source Part Number: 099796-SI8499DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Dimension: 6-MICRO FOOT Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 30nC @ 5V Max Input Capacitance: 1300pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 1.5A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 099796-SI8499DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Dimension: 6-MICRO FOOT Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 30nC @ 5V Max Input Capacitance: 1300pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 1.5A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1 - 099796-SI8499DB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1
099796-SI8499DB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1 099796-SI8499DB-T2-E1
Manufacturer: Vishay Win Source Part Number: 099796-SI8499DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Dimension: 6-MICRO FOOT Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 30nC @ 5V Max Input Capacitance: 1300pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 1.5A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 099796-SI8499DB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-Micro Foot
Dimension: 6-MICRO FOOT
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 30nC @ 5V
Max Input Capacitance: 1300pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 32 mOhm @ 1.5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI8499DB-T2-E1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8499DB-T2-E1CT-ND
Single FETs, MOSFETs SI8499DB-T2-E1CT-ND
P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
Single FETs, MOSFETs - SI8499DB-T2-E1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8499DB-T2-E1DKR-ND
Single FETs, MOSFETs SI8499DB-T2-E1DKR-ND
P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
Single FETs, MOSFETs - SI8499DB-T2-E1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8499DB-T2-E1TR-ND
Single FETs, MOSFETs SI8499DB-T2-E1TR-ND
P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
Mosfet, P Channel, -20V, -16A, Micro Foot-6; Channel Type Vishay - 69W7243 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -20V, -16A, Micro Foot-6; Channel Type Vishay
69W7243
Mosfet, P Channel, -20V, -16A, Micro Foot-6; Channel Type Vishay 69W7243
MOSFET, P CHANNEL, -20V, -16A, MICRO FOOT-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:500mVRoHS Compliant: Yes

MOSFET, P CHANNEL, -20V, -16A, MICRO FOOT-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:500mVRoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Ch, -20V, -16A, Micro Foot-6, Full Reel; Channel Type Vishay - 86R3935 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Ch, -20V, -16A, Micro Foot-6, Full Reel; Channel Type Vishay
86R3935
Mosfet, P Ch, -20V, -16A, Micro Foot-6, Full Reel; Channel Type Vishay 86R3935
MOSFET, P CH, -20V, -16A, MICRO FOOT-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:13W RoHS Compliant: Yes

MOSFET, P CH, -20V, -16A, MICRO FOOT-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:13W RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1

MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8499DB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8499DB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8499DB-T2-E1
MOSFET P-CH 20V 16A 6MICRO FOOT

MOSFET P-CH 20V 16A 6MICRO FOOT

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 099796-SI8499DB-T2-E1 SI8499DB-T2-E1CT-ND 69W7243 86R3935 SI8499DB-T2-E1 SI8499DB-T2-E1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1 Single FETs, MOSFETs Mosfet, P Channel, -20V, -16A, Micro Foot-6; Channel Type Vishay Mosfet, P Ch, -20V, -16A, Micro Foot-6, Full Reel; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 20 volts
PD 2770 to 13000 milliwatts 13000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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