Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1 SI8499DB-T2-E1

Description
Manufacturer: Vishay Win Source Part Number: 099796-SI8499DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Dimension: 6-MICRO FOOT Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 30nC @ 5V Max Input Capacitance: 1300pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 1.5A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 099796-SI8499DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Dimension: 6-MICRO FOOT Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 30nC @ 5V Max Input Capacitance: 1300pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 1.5A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1 - 099796-SI8499DB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1
099796-SI8499DB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1 099796-SI8499DB-T2-E1
Manufacturer: Vishay Win Source Part Number: 099796-SI8499DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Dimension: 6-MICRO FOOT Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 30nC @ 5V Max Input Capacitance: 1300pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 32 mOhm @ 1.5A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 099796-SI8499DB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-Micro Foot
Dimension: 6-MICRO FOOT
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 30nC @ 5V
Max Input Capacitance: 1300pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 32 mOhm @ 1.5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI8499DB-T2-E1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8499DB-T2-E1CT-ND
Single FETs, MOSFETs SI8499DB-T2-E1CT-ND
P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
Single FETs, MOSFETs - SI8499DB-T2-E1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8499DB-T2-E1DKR-ND
Single FETs, MOSFETs SI8499DB-T2-E1DKR-ND
P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
Single FETs, MOSFETs - SI8499DB-T2-E1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8499DB-T2-E1TR-ND
Single FETs, MOSFETs SI8499DB-T2-E1TR-ND
P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8499DB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8499DB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8499DB-T2-E1
MOSFET P-CH 20V 16A 6MICRO FOOT

MOSFET P-CH 20V 16A 6MICRO FOOT

Supplier's Site
Mosfet, P Channel, -20V, -16A, Micro Foot-6; Channel Type Vishay - 69W7243 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -20V, -16A, Micro Foot-6; Channel Type Vishay
69W7243
Mosfet, P Channel, -20V, -16A, Micro Foot-6; Channel Type Vishay 69W7243
MOSFET, P CHANNEL, -20V, -16A, MICRO FOOT-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:500mVRoHS Compliant: Yes

MOSFET, P CHANNEL, -20V, -16A, MICRO FOOT-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:500mVRoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Ch, -20V, -16A, Micro Foot-6, Full Reel; Channel Type Vishay - 86R3935 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Ch, -20V, -16A, Micro Foot-6, Full Reel; Channel Type Vishay
86R3935
Mosfet, P Ch, -20V, -16A, Micro Foot-6, Full Reel; Channel Type Vishay 86R3935
MOSFET, P CH, -20V, -16A, MICRO FOOT-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:13W RoHS Compliant: Yes

MOSFET, P CH, -20V, -16A, MICRO FOOT-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:13W RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1

MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 099796-SI8499DB-T2-E1 SI8499DB-T2-E1CT-ND SI8499DB-T2-E1 69W7243 86R3935 SI8499DB-T2-E1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8499DB-T2-E1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P Channel, -20V, -16A, Micro Foot-6; Channel Type Vishay Mosfet, P Ch, -20V, -16A, Micro Foot-6, Full Reel; Channel Type Vishay MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 20 volts
PD 2770 to 13000 milliwatts 13000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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