SI8487DB-T1-E1 P-channel MOSFET Transistor; 6.2 A; 30 V; 4-Pin MICRO FOOT Product overview: SI8487DB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 6.2 A, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6.2 A, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8487DB-T1-E1 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 803782-SI8487DB-T1-E
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 4-UFBGA
Power Dissipation (Maximum): 1.1W , 2.7W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 31mOhm at 2A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 80nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2240pF at 15V
Vgs(th) (Maximum) at Id: 1.2V at 250μA
Maximum Vgs: ±12V
P-Channel 30V 4.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
P-Channel 30V 4.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
P-Channel 30V 4.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
MOSFET P-CH 30V 4MICROFOOT
MOSFET, P CHANNEL, -30V, -7.7A, MICRO FOOT-4; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.7W RoHS Compliant: Yes
MOSFET, P CH, -30V, -7.7A, MICRO FOOT-4, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.7W RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI8487DB-T1-E1 | 803782-SI8487DB-T1-E1 | SI8487DB-T1-E1TR-ND | SI8487DB-T1-E1 | SI8487DB-T1-E1 | 94T2852 | 94T2853 |
| Product Name | P-Channel 6.2 A 30 V MOSFET Transistor | FETs - Single - SI8487DB-T1-E1 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -30V, -7.7A, Micro Foot-4; Channel Type Vishay | Mosfet, P Ch, -30V, -7.7A, Micro Foot-4, Full Reel; Channel Type Vishay |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | |||
| PD | 2700 milliwatts | 1100 to 2700 milliwatts | 2700 milliwatts | 2700 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
