Vishay Precision Group Single FETs, MOSFETs SI8483DB-T2-E1

Description
P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
Request a Quote Datasheet
Description
P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI8483DB-T2-E1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8483DB-T2-E1DKR-ND
Single FETs, MOSFETs SI8483DB-T2-E1DKR-ND
P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
Single FETs, MOSFETs - SI8483DB-T2-E1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8483DB-T2-E1CT-ND
Single FETs, MOSFETs SI8483DB-T2-E1CT-ND
P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
Single FETs, MOSFETs - SI8483DB-T2-E1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8483DB-T2-E1TR-ND
Single FETs, MOSFETs SI8483DB-T2-E1TR-ND
P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8483DB-T2-E1 - 894856-SI8483DB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8483DB-T2-E1
894856-SI8483DB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8483DB-T2-E1 894856-SI8483DB-T2-E1
Manufacturer: Vishay Win Source Part Number: 894856-SI8483DB-T2-E 1 Series: TrenchFET® Operating Temperature Range: -55°C ~ 150°C (TJ) Features: P-Channel 12 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1) Package: 6-UFBGA Package: Reel - TR Mounting: Surface Mount Family Name: SI8483 Categories: Discrete Semiconductor Products Case / Package: 6-Micro Foot™ (1.5x1) ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: SI8483DB-T2-E1DKR, SI8483DB-T2-E1CT, SI8483DB-T2-E1TR

Manufacturer: Vishay
Win Source Part Number: 894856-SI8483DB-T2-E1
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 12 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
Package: 6-UFBGA
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI8483
Categories: Discrete Semiconductor Products
Case / Package: 6-Micro Foot™ (1.5x1)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SI8483DB-T2-E1DKR, SI8483DB-T2-E1CT, SI8483DB-T2-E1TR

Buy Now Datasheet
Singapore, Singapore
-12V -16A 13W BGA MOSFET Transistor
278-SI8483DB-T2-E1
-12V -16A 13W BGA MOSFET Transistor 278-SI8483DB-T2-E1
P-CH MOSFET, -12V, -16A, 26mR, BGA, 13W Product overview: SI8483DB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -12V, -16A, 13W, BGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, -16A, 13W, BGA, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8483DB-T2-E1 can be used for catalog matching and distributor lookup.

P-CH MOSFET, -12V, -16A, 26mR, BGA, 13W Product overview: SI8483DB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -12V, -16A, 13W, BGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, -16A, 13W, BGA, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8483DB-T2-E1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, P-Ch, 12V, 16A, Micro Foot; Channel Type Vishay - 63W4156 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 12V, 16A, Micro Foot; Channel Type Vishay
63W4156
Mosfet, P-Ch, 12V, 16A, Micro Foot; Channel Type Vishay 63W4156
MOSFET, P-CH, 12V, 16A, MICRO FOOT; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes

MOSFET, P-CH, 12V, 16A, MICRO FOOT; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes

Supplier's Site Datasheet
P-Channel 12-V (D-S) Mosfet Vishay - 26AK9930 - Newark, An Avnet Company
Chicago, IL, United States
P-Channel 12-V (D-S) Mosfet Vishay
26AK9930
P-Channel 12-V (D-S) Mosfet Vishay 26AK9930
P-CHANNEL 12-V (D-S) MOSFET

P-CHANNEL 12-V (D-S) MOSFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1

MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1

Buy Now Datasheet
MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III - 880-SI8483DB-T2-E1 - Utmel Electronic Limited
Hong Kong, China
MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III
880-SI8483DB-T2-E1
MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III 880-SI8483DB-T2-E1
MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III

MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8483DB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8483DB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8483DB-T2-E1
MOSFET P-CH 12V 16A 6MICRO FOOT

MOSFET P-CH 12V 16A 6MICRO FOOT

Supplier's Site
Single FETs, MOSFETs - SI8483DB-T2-E1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI8483DB-T2-E1
Single FETs, MOSFETs SI8483DB-T2-E1
MOSFET P-CH 12V 16A 6MICRO FOOT

MOSFET P-CH 12V 16A 6MICRO FOOT

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI8483DB-T2-E1DKR-ND 894856-SI8483DB-T2-E1 278-SI8483DB-T2-E1 63W4156 26AK9930 SI8483DB-T2-E1 880-SI8483DB-T2-E1 SI8483DB-T2-E1 SI8483DB-T2-E1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8483DB-T2-E1 -12V -16A 13W BGA MOSFET Transistor Mosfet, P-Ch, 12V, 16A, Micro Foot; Channel Type Vishay P-Channel 12-V (D-S) Mosfet Vishay MOSFET MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel
Package Type 6-UFBGA SOT3; 6-Micro Foot™ (1.5x1) TO-3 TO-3 6-UFBGA 6-UFBGA
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
PD 13000 milliwatts 2770 milliwatts 2770 milliwatts
IDSS 16000 milliamps 16000 milliamps
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