Manufacturer: Vishay
Win Source Part Number: 894856-SI8483DB-T2-E
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 12 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
Package: 6-UFBGA
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI8483
Categories: Discrete Semiconductor Products
Case / Package: 6-Micro Foot™ (1.5x1)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SI8483DB-T2-E1DKR, SI8483DB-T2-E1CT, SI8483DB-T2-E1TR
P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
MOSFET P-CH 12V 16A 6MICRO FOOT
MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1
MOSFET P-CH 12V 16A 6MICRO FOOT
MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III
MOSFET, P-CH, 12V, 16A, MICRO FOOT; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes
P-CHANNEL 12-V (D-S) MOSFET
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 894856-SI8483DB-T2-E1 | SI8483DB-T2-E1CT-ND | SI8483DB-T2-E1 | SI8483DB-T2-E1 | SI8483DB-T2-E1 | 880-SI8483DB-T2-E1 | 63W4156 | 26AK9930 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8483DB-T2-E1 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III | Mosfet, P-Ch, 12V, 16A, Micro Foot; Channel Type Vishay | P-Channel 12-V (D-S) Mosfet Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 6-Micro Foot™ (1.5x1) | 6-UFBGA | 6-UFBGA | 6-UFBGA | TO-3 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 12 volts |
