Vishay Intertechnology, Inc. Single FETs, MOSFETs SI8481DB-T1-E1

P-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)

Win Source Part Number: 1277676-SI8481DB-T1-E1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.8W (Tc)
Package / Case: 4-UFBGA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI8481DB-T1-E1CT,SI8481DB-T1-E1TR,SI8481DB-T1-E1DKR
Base Product Number: SI8481
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V