Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8467DB-T2-E1 SI8467DB-T2-E1

Description
Manufacturer: Vishay Win Source Part Number: 1096289-SI8467DB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA, CSPBGA Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 475pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 73 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1096289-SI8467DB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA, CSPBGA Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 475pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 73 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8467DB-T2-E1 - 1096289-SI8467DB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8467DB-T2-E1
1096289-SI8467DB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8467DB-T2-E1 1096289-SI8467DB-T2-E1
Manufacturer: Vishay Win Source Part Number: 1096289-SI8467DB-T2- E1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA, CSPBGA Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 475pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 73 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096289-SI8467DB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 475pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 73 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8467DB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8467DB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8467DB-T2-E1
MOSFET P-CH 20V 4MICROFOOT

MOSFET P-CH 20V 4MICROFOOT

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1096289-SI8467DB-T2-E1 SI8467DB-T2-E1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8467DB-T2-E1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 780 to 1800 milliwatts
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