Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI8465DB-T2-E1

Win Source Part Number: 1277575-SI8465DB-T2- E1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-Microfoot Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V Vgs (Max): ±12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SI8465DB-T2-E1TR,SI8 465DBT2E1,SI8465DB-T 2-E1CT,SI8465DB-T2-E 1DKR Base Product Number: SI8465 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V