MOSFET P-CH 20V 4MICROFOOT Product overview: SI8461DB-T2-E1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8461DB-T2-E1 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 100385-SI8461DB-T2-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 24nC @ 8V
Max Input Capacitance: 610pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
P-Channel 20V 2.5A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot
MOSFET P-CH 20V 4MICROFOOT
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-SI8461DB-T2-E1 | 100385-SI8461DB-T2-E1 | SI8461DB-T2-E1TR-ND | SI8461DB-T2-E1 |
| Product Name | 20V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8461DB-T2-E1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 780 milliwatts | 780 to 1800 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | SOT3; 4-Microfoot | 4-XFBGA, CSPBGA | 610 pF @ 10 V |
