Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8461DB-T2-E1 SI8461DB-T2-E1

Description
Manufacturer: Vishay Win Source Part Number: 100385-SI8461DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA, CSPBGA Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 24nC @ 8V Max Input Capacitance: 610pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 100385-SI8461DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA, CSPBGA Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 24nC @ 8V Max Input Capacitance: 610pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8461DB-T2-E1 - 100385-SI8461DB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8461DB-T2-E1
100385-SI8461DB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8461DB-T2-E1 100385-SI8461DB-T2-E1
Manufacturer: Vishay Win Source Part Number: 100385-SI8461DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA, CSPBGA Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 24nC @ 8V Max Input Capacitance: 610pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 100385-SI8461DB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 24nC @ 8V
Max Input Capacitance: 610pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI8461DB-T2-E1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8461DB-T2-E1TR-ND
Single FETs, MOSFETs SI8461DB-T2-E1TR-ND
P-Channel 20V 2.5A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

P-Channel 20V 2.5A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8461DB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8461DB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8461DB-T2-E1
MOSFET P-CH 20V 4MICROFOOT

MOSFET P-CH 20V 4MICROFOOT

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 100385-SI8461DB-T2-E1 SI8461DB-T2-E1TR-ND SI8461DB-T2-E1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8461DB-T2-E1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 780 to 1800 milliwatts
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