VISHAY SI8457DB-T1-E1 MOSFET, P CHANNEL, -12V, -10.2A, MICRO FOOT-4 Product overview: SI8457DB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, -10.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, -10.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8457DB-T1-E1 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1192942-SI8457DB-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Package / Case: 4-UFBGA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI8457DB-T1-E1DKR,SI
Base Product Number: SI8457
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
P-Channel 12V 6.5A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)
P-Channel 12V 6.5A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)
P-Channel 12V 6.5A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)
MOSFET, P CHANNEL, -12V, -10.2A, MICRO FOOT-4; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:10.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:2.7W RoHS Compliant: Yes
MOSFET, P CHANNEL, -12V, -10.2A, MICRO FOOT-4; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:10.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:2.7W RoHS Compliant: Yes
MOSFET -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6
MOSFET P-CH 12V 4MICRO FOOT
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI8457DB-T1-E1 | 1192942-SI8457DB-T1-E1 | SI8457DB-T1-E1CT-ND | 87X4352 | SI8457DB-T1-E1 | SI8457DB-T1-E1 |
| Product Name | P-Channel -12V -10.2A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, P Channel, -12V, -10.2A, Micro Foot-4; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1100 milliwatts | 1100 to 2700 milliwatts | 2700 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | P-Channel | P-Channel | P-Channel |
