Vishay Intertechnology, Inc. FETs - Single - SI8447DB-T2-E1 SI8447DB-T2-E1

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 720352-SI8447DB-T2-E 1 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 6-Micro Foot (1.5x1) Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 6-UFBGA Power Dissipation (Maximum): 2.77W, 13W Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 75mOhm at 1A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1.2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±12V Input Capacitance (Ciss) (Maximum) at Vds: 600pF at 10V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 720352-SI8447DB-T2-E 1 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 6-Micro Foot (1.5x1) Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 6-UFBGA Power Dissipation (Maximum): 2.77W, 13W Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 75mOhm at 1A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1.2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±12V Input Capacitance (Ciss) (Maximum) at Vds: 600pF at 10V
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Suppliers

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Supplier Links
FETs - Single - SI8447DB-T2-E1 - 720352-SI8447DB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI8447DB-T2-E1
720352-SI8447DB-T2-E1
FETs - Single - SI8447DB-T2-E1 720352-SI8447DB-T2-E1
Manufacturer: Vishay Siliconix Win Source Part Number: 720352-SI8447DB-T2-E 1 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 6-Micro Foot (1.5x1) Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 6-UFBGA Power Dissipation (Maximum): 2.77W, 13W Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 75mOhm at 1A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 1.2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±12V Input Capacitance (Ciss) (Maximum) at Vds: 600pF at 10V

Manufacturer: Vishay Siliconix
Win Source Part Number: 720352-SI8447DB-T2-E1
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 6-Micro Foot (1.5x1)
Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-UFBGA
Power Dissipation (Maximum): 2.77W, 13W
Popularity: Low
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 75mOhm at 1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Gate Source Voltage (Maximum): ±12V
Input Capacitance (Ciss) (Maximum) at Vds: 600pF at 10V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8447DB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8447DB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8447DB-T2-E1
MOSFET P-CH 20V 11A 6MICRO FOOT

MOSFET P-CH 20V 11A 6MICRO FOOT

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 720352-SI8447DB-T2-E1 SI8447DB-T2-E1
Product Name FETs - Single - SI8447DB-T2-E1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 2770 to 13000 milliwatts
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