Vishay Intertechnology, Inc. 20V 11A MOSFET Transistor SI8447DB-T2-E1

MOSFET P-CH 20V 11A 6MICRO FOOT Product overview: SI8447DB-T2-E1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8447DB-T2-E1 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 720352-SI8447DB-T2-E1
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 6-Micro Foot (1.5x1)
Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-UFBGA
Power Dissipation (Maximum): 2.77W, 13W
Popularity: Low
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 75mOhm at 1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Gate Source Voltage (Maximum): ±12V
Input Capacitance (Ciss) (Maximum) at Vds: 600pF at 10V