Vishay Precision Group Single FETs, MOSFETs SI8429DB-T1-E1

Description
P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot
Request a Quote Datasheet
Description
P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - SI8429DB-T1-E1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8429DB-T1-E1TR-ND
Single FETs, MOSFETs SI8429DB-T1-E1TR-ND
P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

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Single FETs, MOSFETs - SI8429DB-T1-E1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8429DB-T1-E1DKR-ND
Single FETs, MOSFETs SI8429DB-T1-E1DKR-ND
P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

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Single FETs, MOSFETs - SI8429DB-T1-E1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8429DB-T1-E1CT-ND
Single FETs, MOSFETs SI8429DB-T1-E1CT-ND
P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8429DB-T1-E1 - 028705-SI8429DB-T1-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8429DB-T1-E1
028705-SI8429DB-T1-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8429DB-T1-E1 028705-SI8429DB-T1-E1
Manufacturer: Vishay Win Source Part Number: 028705-SI8429DB-T1-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA, CSPBGA Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 11.7A (Tc) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 26nC @ 5V Max Input Capacitance: 1640pF @ 4V Maximum Gate-Source Voltage: ±5V Maximum Rds On at Id,Vgs: 35 mOhm @ 1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028705-SI8429DB-T1-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 11.7A (Tc)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 26nC @ 5V
Max Input Capacitance: 1640pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 35 mOhm @ 1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
-8V 11.7A MOSFET Transistor
278-SI8429DB-T1-E1
-8V 11.7A MOSFET Transistor 278-SI8429DB-T1-E1
P-CH MOSFET -8V 11.7A 35mR SMT Product overview: SI8429DB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -8V, 11.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -8V, 11.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8429DB-T1-E1 can be used for catalog matching and distributor lookup.

P-CH MOSFET -8V 11.7A 35mR SMT Product overview: SI8429DB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -8V, 11.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -8V, 11.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8429DB-T1-E1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 8.0V 11.7A 6.25W 35mohm @ 4.5V

MOSFET 8.0V 11.7A 6.25W 35mohm @ 4.5V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8429DB-T1-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8429DB-T1-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8429DB-T1-E1
MOSFET P-CH 8V 11.7A 4MICROFOOT

MOSFET P-CH 8V 11.7A 4MICROFOOT

Supplier's Site
Mosfet, P Channel, -8V, 0.029Ohm, -11.7A, Micro Foot, Full Reel; Channel Type Vishay - 73W9424 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -8V, 0.029Ohm, -11.7A, Micro Foot, Full Reel; Channel Type Vishay
73W9424
Mosfet, P Channel, -8V, 0.029Ohm, -11.7A, Micro Foot, Full Reel; Channel Type Vishay 73W9424
MOSFET, P CHANNEL, -8V, 0.029OHM, -11.7A, MICRO FOOT, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:11.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:4Pins RoHS Compliant: Yes

MOSFET, P CHANNEL, -8V, 0.029OHM, -11.7A, MICRO FOOT, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:11.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:4Pins RoHS Compliant: Yes

Supplier's Site
Mosfet, P-Ch, 8V, 10.2A, Micro Foot Rohs Compliant Vishay - 57AJ0476 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 8V, 10.2A, Micro Foot Rohs Compliant Vishay
57AJ0476
Mosfet, P-Ch, 8V, 10.2A, Micro Foot Rohs Compliant Vishay 57AJ0476
MOSFET, P-CH, 8V, 10.2A, MICRO FOOT ROHS COMPLIANT: YES

MOSFET, P-CH, 8V, 10.2A, MICRO FOOT ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI8429DB-T1-E1TR-ND 028705-SI8429DB-T1-E1 278-SI8429DB-T1-E1 SI8429DB-T1-E1 SI8429DB-T1-E1 73W9424 57AJ0476
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8429DB-T1-E1 -8V 11.7A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P Channel, -8V, 0.029Ohm, -11.7A, Micro Foot, Full Reel; Channel Type Vishay Mosfet, P-Ch, 8V, 10.2A, Micro Foot Rohs Compliant Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type 4-XFBGA, CSPBGA SOT3; 4-Microfoot 4-XFBGA, CSPBGA TO-3 TO-3
V(BR)DSS 8 volts
PD 2770 to 6250 milliwatts 2770 milliwatts
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