P-CH MOSFET -8V 11.7A 35mR SMT Product overview: SI8429DB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -8V, 11.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -8V, 11.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8429DB-T1-E1 can be used for catalog matching and distributor lookup.
P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot
P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot
P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot
Manufacturer: Vishay
Win Source Part Number: 028705-SI8429DB-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 11.7A (Tc)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 26nC @ 5V
Max Input Capacitance: 1640pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 35 mOhm @ 1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET 8.0V 11.7A 6.25W 35mohm @ 4.5V
MOSFET P-CH 8V 11.7A 4MICROFOOT
MOSFET, P CHANNEL, -8V, 0.029OHM, -11.7A, MICRO FOOT, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:11.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:4Pins RoHS Compliant: Yes
MOSFET, P-CH, 8V, 10.2A, MICRO FOOT ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI8429DB-T1-E1 | SI8429DB-T1-E1TR-ND | 028705-SI8429DB-T1-E1 | SI8429DB-T1-E1 | SI8429DB-T1-E1 | 73W9424 | 57AJ0476 |
| Product Name | -8V 11.7A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8429DB-T1-E1 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -8V, 0.029Ohm, -11.7A, Micro Foot, Full Reel; Channel Type Vishay | Mosfet, P-Ch, 8V, 10.2A, Micro Foot Rohs Compliant Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| PD | 2770 milliwatts | 2770 to 6250 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | 4-XFBGA, CSPBGA | SOT3; 4-Microfoot | 4-XFBGA, CSPBGA | TO-3 | TO-3 |
