Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8429DB-T1-E1 SI8429DB-T1-E1

Manufacturer: Vishay
Win Source Part Number: 028705-SI8429DB-T1-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 11.7A (Tc)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 26nC @ 5V
Max Input Capacitance: 1640pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 35 mOhm @ 1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

P-CH MOSFET -8V 11.7A 35mR SMT Product overview: SI8429DB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -8V, 11.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -8V, 11.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8429DB-T1-E1 can be used for catalog matching and distributor lookup.