Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8425DB-T1-E1 SI8425DB-T1-E1

Manufacturer: Vishay
Win Source Part Number: 115054-SI8425DB-T1-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Family Name: Si8425DB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-WLCSP (1.6x1.6)
Dimension: 4-UFBGA, WLCSP
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2800pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 23 mOhm @ 2A, 4.5V
Introduction Date: October 10, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

MOSFET -20V Product overview: SI8425DB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8425DB-T1-E1 can be used for catalog matching and distributor lookup.

P-Channel 20V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)

P-Channel 20V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)

P-Channel 20V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)