P-Channel 20V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)
P-Channel 20V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)
P-Channel 20V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)
MOSFET -20V Product overview: SI8425DB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8425DB-T1-E1 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 115054-SI8425DB-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Family Name: Si8425DB
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-WLCSP (1.6x1.6)
Dimension: 4-UFBGA, WLCSP
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2800pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 23 mOhm @ 2A, 4.5V
Introduction Date: October 10, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
MOSFET -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6
MOSFET, P-CH, 20V, 9.3A, MICRO FOOT ROHS COMPLIANT: YES
MOSFET P-CH 20V 4WLCSP
MOSFET P-CH 20V 4WLCSP
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI8425DB-T1-E1DKR-ND | 278-SI8425DB-T1-E1 | 115054-SI8425DB-T1-E1 | SI8425DB-T1-E1 | 57AJ0475 | SI8425DB-T1-E1 | SI8425DB-T1-E1 |
| Product Name | Single FETs, MOSFETs | -20V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8425DB-T1-E1 | MOSFET | Mosfet, P-Ch, 20V, 9.3A, Micro Foot Rohs Compliant Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| Package Type | 4-UFBGA, WLCSP | SOT3; 4-WLCSP (1.6x1.6) | TO-3 | 4-UFBGA, WLCSP | 4-UFBGA, WLCSP | ||
| PD | 2700 milliwatts | 1100 to 2700 milliwatts | 1100 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
