The SI8424CDB-T1-E1 is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage (V_DS) of 8 V and a continuous Drain Current (I_D) rating of 6.3 A at 25 ¬8C. It exhibits low on-resistance values, with R_DS(on) as low as 0.015 Oc at V_GS of 4.5 V. The device is housed in a compact 4-Microfoot package, measuring 1.6 mm x 1.6 mm, making it suitable for space-constrained applications such as mobile computing and smartphones. The MOSFET has a total gate charge (Q_g) of 25 nC, which contributes to its efficiency in switching applications. It operates within a temperature range of -55 ¬8C to +150 ¬8C, ensuring reliability in various environmental conditions. The device is compliant with lead-free and halogen-free standards, aligning with modern environmental regulations. Engineers considering this component should note its suitability for load switching and low voltage drop applications, as well as its compatibility with surface mount technology. The part is available in reel packaging, facilitating automated assembly processes.
N-Channel 8V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
N-Channel 8V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
N-Channel 8V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
MOSFET N-CH 8V 4MICROFOOT
Manufacturer: Vishay
Win Source Part Number: 894850-SI8424CDB-T1-
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 8 V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
Package: 4-UFBGA, WLCSP
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI8424
Categories: Discrete Semiconductor Products
Case / Package: 4-Microfoot
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SI8424CDB-T1-E1CT, SI8424CDBT1E1, SI8424CDB-T1-E1DKR, SI8424CDB-T1-E1TR
MOSFET, N-CH, 8V, 10A, MICRO FOOT; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:8V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes
MOSFET, N-CH, 8V, 10A, MICRO FOOT; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:8V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes
MOSFET 8V Vds 5V Vgs MICRO FOOT 1.6 x 1.6
MOSFET N-CH 8V 4MICROFOOT
| DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI8424CDB-T1-E1CT-ND | 2567396 | SI8424CDB-T1-E1 | 894850-SI8424CDB-T1-E1 | 01AC5010 | SI8424CDB-T1-E1 | SI8424CDB-T1-E1 |
| Product Name | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8424CDB-T1-E1 | Mosfet, N-Ch, 8V, 10A, Micro Foot; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | 4-UFBGA, WLCSP | WLCSP | 4-UFBGA, WLCSP | SOT3; 4-Microfoot | TO-3 | 4-UFBGA, WLCSP | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 8 volts | ||||||
| IDSS | 6300 milliamps | 10000 milliamps |
