Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8424CDB-T1-E1 SI8424CDB-T1-E1

Description
Manufacturer: Vishay Win Source Part Number: 894850-SI8424CDB-T1- E1 Series: TrenchFET® Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 8 V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot Package: 4-UFBGA, WLCSP Package: Reel - TR Mounting: Surface Mount Family Name: SI8424 Categories: Discrete Semiconductor Products Case / Package: 4-Microfoot ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: SI8424CDB-T1-E1CT, SI8424CDBT1E1, SI8424CDB-T1-E1DKR, SI8424CDB-T1-E1TR
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Description
Manufacturer: Vishay Win Source Part Number: 894850-SI8424CDB-T1- E1 Series: TrenchFET® Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 8 V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot Package: 4-UFBGA, WLCSP Package: Reel - TR Mounting: Surface Mount Family Name: SI8424 Categories: Discrete Semiconductor Products Case / Package: 4-Microfoot ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: SI8424CDB-T1-E1CT, SI8424CDBT1E1, SI8424CDB-T1-E1DKR, SI8424CDB-T1-E1TR
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Datasheet
Datasheet Summary
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The SI8424CDB-T1-E1 is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage (V_DS) of 8 V and a continuous Drain Current (I_D) rating of 6.3 A at 25 ¬8C. It exhibits low on-resistance values, with R_DS(on) as low as 0.015 Oc at V_GS of 4.5 V. The device is housed in a compact 4-Microfoot package, measuring 1.6 mm x 1.6 mm, making it suitable for space-constrained applications such as mobile computing and smartphones. The MOSFET has a total gate charge (Q_g) of 25 nC, which contributes to its efficiency in switching applications. It operates within a temperature range of -55 ¬8C to +150 ¬8C, ensuring reliability in various environmental conditions. The device is compliant with lead-free and halogen-free standards, aligning with modern environmental regulations. Engineers considering this component should note its suitability for load switching and low voltage drop applications, as well as its compatibility with surface mount technology. The part is available in reel packaging, facilitating automated assembly processes.

Datasheet Summary
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The SI8424CDB-T1-E1 is an N-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage (V_DS) of 8 V and a continuous Drain Current (I_D) rating of 6.3 A at 25 ¬8C. It exhibits low on-resistance values, with R_DS(on) as low as 0.015 Oc at V_GS of 4.5 V. The device is housed in a compact 4-Microfoot package, measuring 1.6 mm x 1.6 mm, making it suitable for space-constrained applications such as mobile computing and smartphones. The MOSFET has a total gate charge (Q_g) of 25 nC, which contributes to its efficiency in switching applications. It operates within a temperature range of -55 ¬8C to +150 ¬8C, ensuring reliability in various environmental conditions. The device is compliant with lead-free and halogen-free standards, aligning with modern environmental regulations. Engineers considering this component should note its suitability for load switching and low voltage drop applications, as well as its compatibility with surface mount technology. The part is available in reel packaging, facilitating automated assembly processes.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8424CDB-T1-E1 - 894850-SI8424CDB-T1-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8424CDB-T1-E1
894850-SI8424CDB-T1-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8424CDB-T1-E1 894850-SI8424CDB-T1-E1
Manufacturer: Vishay Win Source Part Number: 894850-SI8424CDB-T1- E1 Series: TrenchFET® Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 8 V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot Package: 4-UFBGA, WLCSP Package: Reel - TR Mounting: Surface Mount Family Name: SI8424 Categories: Discrete Semiconductor Products Case / Package: 4-Microfoot ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: SI8424CDB-T1-E1CT, SI8424CDBT1E1, SI8424CDB-T1-E1DKR, SI8424CDB-T1-E1TR

Manufacturer: Vishay
Win Source Part Number: 894850-SI8424CDB-T1-E1
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 8 V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
Package: 4-UFBGA, WLCSP
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI8424
Categories: Discrete Semiconductor Products
Case / Package: 4-Microfoot
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SI8424CDB-T1-E1CT, SI8424CDBT1E1, SI8424CDB-T1-E1DKR, SI8424CDB-T1-E1TR

Buy Now Datasheet
MOSFETs - 2567396 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567396
MOSFETs 2567396
N-Ch Micro Foot Mosfet

N-Ch Micro Foot Mosfet

Supplier's Site
MOSFETs - 2567397P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567397P
MOSFETs 2567397P
N-Ch Micro Foot Mosfet

N-Ch Micro Foot Mosfet

Supplier's Site
MOSFETs - 2567397 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567397
MOSFETs 2567397
N-Ch Micro Foot Mosfet

N-Ch Micro Foot Mosfet

Supplier's Site
Singapore
SMD 8V 10A MOSFET Transistor
278-SI8424CDB-T1-E1
SMD 8V 10A MOSFET Transistor 278-SI8424CDB-T1-E1
N-CH MOSFET 8V, 10A, 20mR, Surface Mount Product overview: SI8424CDB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 8V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 8V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8424CDB-T1-E1 can be used for catalog matching and distributor lookup.

N-CH MOSFET 8V, 10A, 20mR, Surface Mount Product overview: SI8424CDB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 8V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 8V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8424CDB-T1-E1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI8424CDB-T1-E1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI8424CDB-T1-E1
Single FETs, MOSFETs SI8424CDB-T1-E1
MOSFET N-CH 8V 4MICROFOOT

MOSFET N-CH 8V 4MICROFOOT

Supplier's Site Datasheet
Single FETs, MOSFETs - SI8424CDB-T1-E1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8424CDB-T1-E1CT-ND
Single FETs, MOSFETs SI8424CDB-T1-E1CT-ND
N-Channel 8V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

N-Channel 8V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

Buy Now Datasheet
Single FETs, MOSFETs - SI8424CDB-T1-E1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8424CDB-T1-E1TR-ND
Single FETs, MOSFETs SI8424CDB-T1-E1TR-ND
N-Channel 8V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

N-Channel 8V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

Buy Now Datasheet
Single FETs, MOSFETs - SI8424CDB-T1-E1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8424CDB-T1-E1DKR-ND
Single FETs, MOSFETs SI8424CDB-T1-E1DKR-ND
N-Channel 8V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

N-Channel 8V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

Buy Now Datasheet
Mosfet, N-Ch, 8V, 10A, Micro Foot; Transistor Polarity Vishay - 01AC5010 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 8V, 10A, Micro Foot; Transistor Polarity Vishay
01AC5010
Mosfet, N-Ch, 8V, 10A, Micro Foot; Transistor Polarity Vishay 01AC5010
MOSFET, N-CH, 8V, 10A, MICRO FOOT; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:8V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes

MOSFET, N-CH, 8V, 10A, MICRO FOOT; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:8V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N-Ch, 8V, 10A, Micro Foot; Transistor Polarity Vishay - 05AC9511 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 8V, 10A, Micro Foot; Transistor Polarity Vishay
05AC9511
Mosfet, N-Ch, 8V, 10A, Micro Foot; Transistor Polarity Vishay 05AC9511
MOSFET, N-CH, 8V, 10A, MICRO FOOT; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:8V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes

MOSFET, N-CH, 8V, 10A, MICRO FOOT; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:8V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8424CDB-T1-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8424CDB-T1-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8424CDB-T1-E1
MOSFET N-CH 8V 4MICROFOOT

MOSFET N-CH 8V 4MICROFOOT

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 8V Vds 5V Vgs MICRO FOOT 1.6 x 1.6

MOSFET 8V Vds 5V Vgs MICRO FOOT 1.6 x 1.6

Buy Now Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 894850-SI8424CDB-T1-E1 2567396 278-SI8424CDB-T1-E1 SI8424CDB-T1-E1 SI8424CDB-T1-E1CT-ND 01AC5010 SI8424CDB-T1-E1 SI8424CDB-T1-E1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8424CDB-T1-E1 MOSFETs SMD 8V 10A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 8V, 10A, Micro Foot; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 4-Microfoot WLCSP 4-UFBGA, WLCSP 4-UFBGA, WLCSP TO-3 4-UFBGA, WLCSP
PD 2700 milliwatts 1100 milliwatts
Transistor Technology / Material MOSFET (Metal Oxide)
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