Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8417DB-T2-E1 SI8417DB-T2-E1

Manufacturer: Vishay
Win Source Part Number: 064587-SI8417DB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-Micro Foot
Dimension: 6-MICRO FOOT
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 14.5A (Tc)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 57nC @ 5V
Max Input Capacitance: 2220pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 21 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

MOSFET P-CH 12V 14.5A 6MICROFOOT Product overview: SI8417DB-T2-E1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 14.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 14.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8417DB-T2-E1 can be used for catalog matching and distributor lookup.

P-Channel 12V 14.5A (Tc) 2.9W (Ta), 6.57W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)