Vishay Intertechnology, Inc. Single FETs, MOSFETs SI8417DB-T2-E1

Description
P-Channel 12V 14.5A (Tc) 2.9W (Ta), 6.57W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
Request a Quote Datasheet
Description
P-Channel 12V 14.5A (Tc) 2.9W (Ta), 6.57W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI8417DB-T2-E1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI8417DB-T2-E1-ND
Single FETs, MOSFETs SI8417DB-T2-E1-ND
P-Channel 12V 14.5A (Tc) 2.9W (Ta), 6.57W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

P-Channel 12V 14.5A (Tc) 2.9W (Ta), 6.57W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8417DB-T2-E1 - 064587-SI8417DB-T2-E1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8417DB-T2-E1
064587-SI8417DB-T2-E1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8417DB-T2-E1 064587-SI8417DB-T2-E1
Manufacturer: Vishay Win Source Part Number: 064587-SI8417DB-T2-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-Micro Foot Dimension: 6-MICRO FOOT Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 14.5A (Tc) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 57nC @ 5V Max Input Capacitance: 2220pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 21 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 064587-SI8417DB-T2-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-Micro Foot
Dimension: 6-MICRO FOOT
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 14.5A (Tc)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 57nC @ 5V
Max Input Capacitance: 2220pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 21 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
12V 14.5A MOSFET Transistor
278-SI8417DB-T2-E1
12V 14.5A MOSFET Transistor 278-SI8417DB-T2-E1
MOSFET P-CH 12V 14.5A 6MICROFOOT Product overview: SI8417DB-T2-E1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 14.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 14.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8417DB-T2-E1 can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 14.5A 6MICROFOOT Product overview: SI8417DB-T2-E1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 14.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 14.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8417DB-T2-E1 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI8417DB-T2-E1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI8417DB-T2-E1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI8417DB-T2-E1
MOSFET P-CH 12V 14.5A 6MICROFOOT

MOSFET P-CH 12V 14.5A 6MICROFOOT

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI8417DB-T2-E1-ND 064587-SI8417DB-T2-E1 278-SI8417DB-T2-E1 SI8417DB-T2-E1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8417DB-T2-E1 12V 14.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type 6-MICRO FOOT®CSP SOT3; 6-Micro Foot Tape & Reel (TR) 2220 pF @ 6 V
V(BR)DSS 12 volts
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