MOSFET P-CH 12V 5.3A 4MICROFOOT Product overview: SI8415DB-T1-E1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8415DB-T1-E1 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 103036-SI8415DB-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.47W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 30nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 37 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
MOSFET P-CH 12V 5.3A 4MICROFOOT
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI8415DB-T1-E1 | 103036-SI8415DB-T1-E1 | SI8415DB-T1-E1 |
| Product Name | 12V 5.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8415DB-T1-E1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1470 milliwatts | 1470 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tape & Reel (TR) | SOT3; 4-Microfoot |