N-Channel 20V 3.8A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1)
N-Channel 20V 3.8A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1)
N-Channel 20V 3.8A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1)
Small Signal Field-Effect Transistor, Product overview: SI8410DB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8410DB-T2-E1 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 894845-SI8410DB-T2-E
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 20 V 3.8A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1)
Package: 4-UFBGA
Package: Reel - TR
Mounting: Surface Mount
Family Name: Si8410
Categories: Discrete Semiconductor Products
Case / Package: 4-Micro Foot (1x1)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SI8410DB-T2-E1DKR, SI8410DB-T2-E1TR, SI8410DB-T2-E1CT
MOSFET, N-CH, 20V, 5.7A, TRENCHFET-4; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV RoHS Compliant: Yes
MOSFET, N-CH, 20V, 5.7A, TRENCHFET-4; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV RoHS Compliant: Yes
MOSFET 20V Vds 8V Vgs MICRO FOOT 1 x 1
MOSFET N-CH 20V 4MICRO FOOT
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI8410DB-T2-E1TR-ND | 278-SI8410DB-T2-E1 | 894845-SI8410DB-T2-E1 | 44Y1684 | SI8410DB-T2-E1 | SI8410DB-T2-E1 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8410DB-T2-E1 | Mosfet, N-Ch, 20V, 5.7A, Trenchfet-4; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | 4-UFBGA | SOT3; 4-Micro Foot (1x1) | TO-3 | 4-UFBGA | ||
| PD | 780 milliwatts |
