MOSFET P-CH 30V 4.6A 4MICROFOOT
Manufacturer: Vishay
Win Source Part Number: 028704-SI8409DB-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.47W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.6A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 26nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 46 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
MOSFET P-CH 30V 4.6A 4MICROFOOT
MOSFET, P CHANNEL, -30V, -4.6A, MICRO FOOT-4; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.47W RoHS Compliant: Yes
P CH MOSFET, -30V, 6.3A, MICRO FOOT; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI8409DB-T1-E1 | 028704-SI8409DB-T1-E1 | SI8409DB-T1-E1TR-ND | SI8409DB-T1-E1 | SI8409DB-T1-E1 | 18X0030 | 51K7013 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8409DB-T1-E1 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -30V, -4.6A, Micro Foot-4; Channel Type Vishay | P Ch Mosfet, -30V, 6.3A, Micro Foot; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 4600 milliamps | 4600 milliamps | 6300 milliamps |
