Manufacturer: Vishay
Win Source Part Number: 028704-SI8409DB-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.47W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.6A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 26nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 46 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 30V 4.6A 4MICROFOOT
P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
P-CH JFET 30V 4.6A 46mR SMT 1.6x1.6mm Product overview: SI8409DB-T1-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8409DB-T1-E1 can be used for catalog matching and distributor lookup.
MOSFET, P CHANNEL, -30V, -4.6A, MICRO FOOT-4; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.47W RoHS Compliant: Yes
P CH MOSFET, -30V, 6.3A, MICRO FOOT; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
MOSFET P-CH 30V 4.6A 4MICROFOOT
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028704-SI8409DB-T1-E1 | SI8409DB-T1-E1 | SI8409DB-T1-E1TR-ND | 278-SI8409DB-T1-E1 | 18X0030 | 51K7013 | SI8409DB-T1-E1 | SI8409DB-T1-E1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8409DB-T1-E1 | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 4.6A MOSFET Transistor | Mosfet, P Channel, -30V, -4.6A, Micro Foot-4; Channel Type Vishay | P Ch Mosfet, -30V, 6.3A, Micro Foot; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 1470 milliwatts | 1470 milliwatts | 1470 milliwatts | 1470 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
