Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8405DB-T1-E1 SI8405DB-T1-E1

Manufacturer: Vishay Win Source Part Number: 101945-SI8405DB-T1-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.47W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-Microfoot Dimension: 4-XFBGA, CSPBGA Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.6A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 21nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 55 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance