MOSFET N-CH 8V 12.2A 4MICROFOOT
Manufacturer: Vishay
Win Source Part Number: 102868-SI8404DB-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 12.2A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 33nC @ 5V
Max Input Capacitance: 1950pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 31 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
MOSFET N-CH 8V 12.2A 4MICROFOOT
| ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI8404DB-T1-E1 | 102868-SI8404DB-T1-E1 | SI8404DB-T1-E1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI8404DB-T1-E1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 8 volts | 8 volts | |
| IDSS | 12200 milliamps |
