Vishay Intertechnology, Inc. Single FETs, MOSFETs SI8401DB-T1-E1

P-Channel 20V 3.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot

P-Channel 20V 3.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot

P-Channel 20V 3.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot

MOSFET P-CH 20V 3.6A 4MICROFOOT Product overview: SI8401DB-T1-E1 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8401DB-T1-E1 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 097591-SI8401DB-T1-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.47W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-Microfoot
Dimension: 4-XFBGA, CSPBGA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.6A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 65 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient