Vishay Precision Group Electrical Parts - SI7997DP-T1-GE3 SI7997DP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1249569-SI7997DP-T1- GE3 Series: TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Dual Mounting: SMD FET Type: 2 P-Channel (Dual) FET Feature: Standard Current - Continuous Drain (Id) @ 25°C: 60A Power - Max: 46W Family Name: Si7997DP Categories: Discrete Semiconductor Products Manufacturer Homepage: www.vishay.com Manufacturer Package: PowerPAK SO-8 Dual Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6200pF @ 15V Rds On (Maximum) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Introduction Date: July 30, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1249569-SI7997DP-T1- GE3 Series: TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Dual Mounting: SMD FET Type: 2 P-Channel (Dual) FET Feature: Standard Current - Continuous Drain (Id) @ 25°C: 60A Power - Max: 46W Family Name: Si7997DP Categories: Discrete Semiconductor Products Manufacturer Homepage: www.vishay.com Manufacturer Package: PowerPAK SO-8 Dual Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6200pF @ 15V Rds On (Maximum) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Introduction Date: July 30, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Electrical Parts - SI7997DP-T1-GE3 - 1249569-SI7997DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Electrical Parts - SI7997DP-T1-GE3
1249569-SI7997DP-T1-GE3
Electrical Parts - SI7997DP-T1-GE3 1249569-SI7997DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1249569-SI7997DP-T1- GE3 Series: TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Dual Mounting: SMD FET Type: 2 P-Channel (Dual) FET Feature: Standard Current - Continuous Drain (Id) @ 25°C: 60A Power - Max: 46W Family Name: Si7997DP Categories: Discrete Semiconductor Products Manufacturer Homepage: www.vishay.com Manufacturer Package: PowerPAK SO-8 Dual Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6200pF @ 15V Rds On (Maximum) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Introduction Date: July 30, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1249569-SI7997DP-T1-GE3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8 Dual
Mounting: SMD
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 60A
Power - Max: 46W
Family Name: Si7997DP
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK SO-8 Dual
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6200pF @ 15V
Rds On (Maximum) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
Introduction Date: July 30, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI7997DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7997DP-T1-GE3DKR-ND
FET, MOSFET Arrays SI7997DP-T1-GE3DKR-ND
Mosfet Array 2 P-Channel (Dual) 30V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 P-Channel (Dual) 30V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7997DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7997DP-T1-GE3CT-ND
FET, MOSFET Arrays SI7997DP-T1-GE3CT-ND
Mosfet Array 2 P-Channel (Dual) 30V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 P-Channel (Dual) 30V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - SI7997DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI7997DP-T1-GE3TR-ND
FET, MOSFET Arrays SI7997DP-T1-GE3TR-ND
Mosfet Array 2 P-Channel (Dual) 30V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 P-Channel (Dual) 30V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
Singapore
30V 20.8A MOSFET Transistor
278-SI7997DP-T1-GE3
30V 20.8A MOSFET Transistor 278-SI7997DP-T1-GE3
P-CH MOSFET 30V 20.8A 5.5mR PwrPAK SO-8 Product overview: SI7997DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7997DP-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 30V 20.8A 5.5mR PwrPAK SO-8 Product overview: SI7997DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7997DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 1807902P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807902P
MOSFETs 1807902P
Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V

Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V

Supplier's Site
MOSFETs - 1807902 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807902
MOSFETs 1807902
Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V

Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V

Supplier's Site
MOSFETs - 1807325 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1807325
MOSFETs 1807325
Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V

Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V

Supplier's Site
FET, MOSFET Arrays - SI7997DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7997DP-T1-GE3
FET, MOSFET Arrays SI7997DP-T1-GE3
MOSFET 2P-CH 30V 60A PPAK SO-8

MOSFET 2P-CH 30V 60A PPAK SO-8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -30V Vds 20V Vgs PowerPAK SO-8

MOSFET -30V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Mosfet, Dual P-Ch, -20.8V, Powerpak So; Transistor Polarity Vishay - 01AC5009 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual P-Ch, -20.8V, Powerpak So; Transistor Polarity Vishay
01AC5009
Mosfet, Dual P-Ch, -20.8V, Powerpak So; Transistor Polarity Vishay 01AC5009
MOSFET, DUAL P-CH, -20.8V, POWERPAK SO; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V;RoHS Compliant: Yes

MOSFET, DUAL P-CH, -20.8V, POWERPAK SO; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V;RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Dual P Channel, -30V, -60A, Powerpak So-8, Full Reel; Transistor Polarity Vishay - 86R3932 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual P Channel, -30V, -60A, Powerpak So-8, Full Reel; Transistor Polarity Vishay
86R3932
Mosfet, Dual P Channel, -30V, -60A, Powerpak So-8, Full Reel; Transistor Polarity Vishay 86R3932
MOSFET, DUAL P CHANNEL, -30V, -60A, POWERPAK SO-8, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:60A; On Resistance Rds(on):0.0063ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, DUAL P CHANNEL, -30V, -60A, POWERPAK SO-8, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:60A; On Resistance Rds(on):0.0063ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site
Mosfet, Dual P-Ch, -20.8V, Powerpak So; Transistor Polarity Vishay - 05AC9510 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual P-Ch, -20.8V, Powerpak So; Transistor Polarity Vishay
05AC9510
Mosfet, Dual P-Ch, -20.8V, Powerpak So; Transistor Polarity Vishay 05AC9510
MOSFET, DUAL P-CH, -20.8V, POWERPAK SO; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V;RoHS Compliant: Yes

MOSFET, DUAL P-CH, -20.8V, POWERPAK SO; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V;RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7997DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7997DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7997DP-T1-GE3
MOSFET 2P-CH 30V 60A PPAK SO8

MOSFET 2P-CH 30V 60A PPAK SO8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. RS Components, Ltd. ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1249569-SI7997DP-T1-GE3 SI7997DP-T1-GE3DKR-ND 278-SI7997DP-T1-GE3 1807902P SI7997DP-T1-GE3 SI7997DP-T1-GE3 01AC5009 86R3932 SI7997DP-T1-GE3
Product Name Electrical Parts - SI7997DP-T1-GE3 FET, MOSFET Arrays 30V 20.8A MOSFET Transistor MOSFETs FET, MOSFET Arrays MOSFET Mosfet, Dual P-Ch, -20.8V, Powerpak So; Transistor Polarity Vishay Mosfet, Dual P Channel, -30V, -60A, Powerpak So-8, Full Reel; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; 2 P-Channel (Dual) P-Channel
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 Dual PowerPack SO-8; PowerPAK® SO-8 Dual TO-3 TO-3; SO-8
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
PD 46000 milliwatts
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