Mosfet Array 2 N-Channel (Half Bridge) 20V 8A 19.8W, 21.9W Surface Mount PowerPAK® SO-8 Dual
Manufacturer: Vishay
Win Source Part Number: 1249566-SI7980DP-T1-
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8 Dual
Mounting: SMD
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 8A
Power - Max: 19.8W, 21.9W
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK SO-8 Dual
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1010pF @ 10V
Rds On (Maximum) @ Id, Vgs: 22 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): UPA2463T1Q-E1-AX; uPA2465T1QE1AX; u PA2460T1Q-E1-AX;
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 8A PPAK SO8 Product overview: SI7980DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7980DP-T1-GE3 can be used for catalog matching and distributor lookup.
DUAL N CH/SCHOTTKY MOSFET, 20V SOIC; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:3.1WRoHS Compliant: Yes
MOSFET 2N-CH 20V 8A PPAK SO-8
MOSFET 2N-CH 20V 8A PPAK SO8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7980DP-T1-GE3TR-ND | 1249566-SI7980DP-T1-GE3 | 289-SI7980DP-T1-GE3 | 16P3883 | 880-SI7980DP-T1-GE3 | SI7980DP-T1-GE3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7980DP-T1-GE3 | 20V 8A MOSFET Transistor | Dual N Ch/schottky Mosfet, 20V Soic; Transistor Polarity Vishay | MOSFET 2N-CH 20V 8A PPAK SO-8 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SO-8; PowerPAK® SO-8 Dual | SO-8; SOT3 | Tape & Reel (TR) | TO-3 | ||
| Polarity | N-Channel | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Packing Method | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT) | ||
| IDSS | 8000 milliamps |
