Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7980DP-T1-E3 SI7980DP-T1-E3

Manufacturer: Vishay
Win Source Part Number: 042625-SI7980DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 19.8W, 21.9W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1010pF @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 20V 8A PPAK SO-8 Product overview: SI7980DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI7980DP-T1-E3 can be used for catalog matching and distributor lookup.