MOSFET 2N-CH 20V 8A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 042625-SI7980DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 19.8W, 21.9W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1010pF @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
| ODG (Origin Data Global) | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7980DP-T1-E3 | 042625-SI7980DP-T1-E3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7980DP-T1-E3 |
| Polarity | N-Channel; 2 N-Channel (Half Bridge) | N-Channel |
| V(BR)DSS | 20 volts | 20 volts |
| IDSS | 8000 milliamps | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
