Vishay Intertechnology, Inc. MOSFET SI7973DP-T1-GE3

Dual P-Channel MOSFET designed for load switching applications, packaged in a PowerPAK SO-8 with dimensions of 6.15 mm by 5.15 mm. It has a drain-source voltage rating of -12 V, with on-state resistance of 0.015 Ω at -4.5 V gate-source voltage and -12.8 A drain current, and 0.019 Ω at -2.5 V gate-source voltage and -11.4 A drain current. Continuous drain current is -12.8 A at 25 °C and -9.2 A at 70 °C. Maximum power dissipation is 3.5 W at 25 °C and 1.9 W at 70 °C. The device meets IEC 61249-2-21 halogen-free requirements and operates from -55 °C to 150 °C junction temperature.