Vishay Intertechnology, Inc. MOSFET SI7973DP-T1-E3

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MOSFET 12V 12.8A 1.4W
Description
MOSFET 12V 12.8A 1.4W
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The Si7973DP-T1-E3 is a dual P-channel MOSFET in a PowerPAK SO-8 package, measuring 6.15 mm by 5.15 mm, designed for load switch applications. It has a drain-source voltage rating of -12 V and a continuous drain current of -12.8 A at 25 °C. On-state resistance is 0.015 Ω at -4.5 V gate-source voltage and 0.019 Ω at -2.5 V. The device is halogen-free according to IEC 61249-2-21 and meets TrenchFET® Power MOSFET specifications with 1.8 V gate drive compatibility. Maximum power dissipation is 3.5 W at 25 °C and 1.9 W at 70 °C when mounted on a 1" x 1" FR4 board. Junction temperature ranges from -55 °C to 150 °C.

Datasheet Summary
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The Si7973DP-T1-E3 is a dual P-channel MOSFET in a PowerPAK SO-8 package, measuring 6.15 mm by 5.15 mm, designed for load switch applications. It has a drain-source voltage rating of -12 V and a continuous drain current of -12.8 A at 25 °C. On-state resistance is 0.015 Ω at -4.5 V gate-source voltage and 0.019 Ω at -2.5 V. The device is halogen-free according to IEC 61249-2-21 and meets TrenchFET® Power MOSFET specifications with 1.8 V gate drive compatibility. Maximum power dissipation is 3.5 W at 25 °C and 1.9 W at 70 °C when mounted on a 1" x 1" FR4 board. Junction temperature ranges from -55 °C to 150 °C.

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Sheung Wan, Hong Kong
MOSFET 12V 12.8A 1.4W

MOSFET 12V 12.8A 1.4W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7973DP-T1-E3
Product Name MOSFET
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