The 1092946-SI7972DP-T1-
Power Field-Effect Transistor, Product overview: SI7972DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7972DP-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual
Win Source Part Number: 1092946-SI7972DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power - Max: 22W
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI7972DP-T1-GE3CT-ND
Base Product Number: SI7972
MOSFET 2 N-CH 30V POWERPAK SO8
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
MOSFET 2N-CH 60V 8A PPAK SO8
DUAL MOSFET,N-CH, 60V, 8A, POWERPAK SO ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7972DP-T1-GE3 | 742-SI7972DP-T1-GE3DKR-ND | 1092946-SI7972DP-T1-GE3 | SI7972DP-T1-GE3 | SI7972DP-T1-GE3 | SI7972DP-T1-GE3 | 57AJ0473 |
| Product Name | MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet,n-Ch, 60V, 8A, Powerpak So Rohs Compliant Vishay |
| Package Type | SO-8; PowerPAK® SO-8 Dual | SO-8; SOT3 | SO-8; PowerPAK® SO-8 Dual | TO-3 | |||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
