Vishay Intertechnology, Inc. MOSFET Transistor SI7972DP-T1-GE3

Description
Power Field-Effect Transistor, Product overview: SI7972DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7972DP-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
Power Field-Effect Transistor, Product overview: SI7972DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7972DP-T1-GE3 can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The 1092946-SI7972DP-T1-GE3 is a dual N-Channel MOSFET with a maximum drain-source voltage (V_DS) of 60 V and a continuous drain current (I_D) rating of 8 A at 25 ¬8C. It features a low on-state resistance (R_DS(on)) of 18 mOc at a gate-source voltage (V_GS) of 10 V and 21 mOc at 4.5 V. The total gate charge (Q_g) is specified at 7.1 nC, making it suitable for PWM applications. The device is housed in a PowerPAK SO-8 package, which is designed for surface mount technology. It operates over a temperature range of -55 ¬8C to +150 ¬8C and has a maximum power dissipation of 22 W. The MOSFET is also characterized by its low input capacitance of 1050 pF at 30 V, which contributes to its efficiency in switching applications.

Datasheet Summary
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The 1092946-SI7972DP-T1-GE3 is a dual N-Channel MOSFET with a maximum drain-source voltage (V_DS) of 60 V and a continuous drain current (I_D) rating of 8 A at 25 ¬8C. It features a low on-state resistance (R_DS(on)) of 18 mOc at a gate-source voltage (V_GS) of 10 V and 21 mOc at 4.5 V. The total gate charge (Q_g) is specified at 7.1 nC, making it suitable for PWM applications. The device is housed in a PowerPAK SO-8 package, which is designed for surface mount technology. It operates over a temperature range of -55 ¬8C to +150 ¬8C and has a maximum power dissipation of 22 W. The MOSFET is also characterized by its low input capacitance of 1050 pF at 30 V, which contributes to its efficiency in switching applications.

Suppliers

Company
Product
Description
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MOSFET Transistor 278-SI7972DP-T1-GE3
Power Field-Effect Transistor, Product overview: SI7972DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7972DP-T1-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SI7972DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7972DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - 742-SI7972DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI7972DP-T1-GE3CT-ND
FET, MOSFET Arrays 742-SI7972DP-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - 742-SI7972DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI7972DP-T1-GE3TR-ND
FET, MOSFET Arrays 742-SI7972DP-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
FET, MOSFET Arrays - 742-SI7972DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SI7972DP-T1-GE3DKR-ND
FET, MOSFET Arrays 742-SI7972DP-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual

Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1092946-SI7972DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1092946-SI7972DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1092946-SI7972DP-T1-GE3
Win Source Part Number: 1092946-SI7972DP-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Power - Max: 22W Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SI7972DP-T1-GE3CT-ND ,SI7972DP-T1-GE3DKR, SI7972DP-T1-GE3DKR-N D,742-SI7972DP-T1-GE 3TR,SI7972DP-T1-GE3T R,742-SI7972DP-T1-GE 3DKR,SI7972DP-T1-GE3 TR-ND,742-SI7972DP-T 1-GE3CT,SI7972DP-T1- GE3CT Base Product Number: SI7972

Win Source Part Number: 1092946-SI7972DP-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power - Max: 22W
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI7972DP-T1-GE3CT-ND,SI7972DP-T1-GE3DKR,SI7972DP-T1-GE3DKR-ND,742-SI7972DP-T1-GE3TR,SI7972DP-T1-GE3TR,742-SI7972DP-T1-GE3DKR,SI7972DP-T1-GE3TR-ND,742-SI7972DP-T1-GE3CT,SI7972DP-T1-GE3CT
Base Product Number: SI7972

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 60V Vds 20V Vgs PowerPAK SO-8

MOSFET 60V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Dual Mosfet,n-Ch, 60V, 8A, Powerpak So Rohs Compliant Vishay - 57AJ0473 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet,n-Ch, 60V, 8A, Powerpak So Rohs Compliant Vishay
57AJ0473
Dual Mosfet,n-Ch, 60V, 8A, Powerpak So Rohs Compliant Vishay 57AJ0473
DUAL MOSFET,N-CH, 60V, 8A, POWERPAK SO ROHS COMPLIANT: YES

DUAL MOSFET,N-CH, 60V, 8A, POWERPAK SO ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7972DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7972DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7972DP-T1-GE3
MOSFET 2N-CH 60V 8A PPAK SO8

MOSFET 2N-CH 60V 8A PPAK SO8

Supplier's Site
FET, MOSFET Arrays - SI7972DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI7972DP-T1-GE3
FET, MOSFET Arrays SI7972DP-T1-GE3
MOSFET 2 N-CH 30V POWERPAK SO8

MOSFET 2 N-CH 30V POWERPAK SO8

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SI7972DP-T1-GE3 742-SI7972DP-T1-GE3CT-ND 1092946-SI7972DP-T1-GE3 SI7972DP-T1-GE3 57AJ0473 SI7972DP-T1-GE3 SI7972DP-T1-GE3
Product Name MOSFET Transistor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays MOSFET Dual Mosfet,n-Ch, 60V, 8A, Powerpak So Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Package Type SO-8; PowerPAK® SO-8 Dual SO-8; SOT3 TO-3 SO-8; PowerPAK® SO-8 Dual
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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