The 1092946-SI7972DP-T1-GE3 is a dual N-Channel MOSFET with a maximum drain-source voltage (V_DS) of 60 V and a continuous drain current (I_D) rating of 8 A at 25 ¬8C. It features a low on-state resistance (R_DS(on)) of 18 mOc at a gate-source voltage (V_GS) of 10 V and 21 mOc at 4.5 V. The total gate charge (Q_g) is specified at 7.1 nC, making it suitable for PWM applications. The device is housed in a PowerPAK SO-8 package, which is designed for surface mount technology. It operates over a temperature range of -55 ¬8C to +150 ¬8C and has a maximum power dissipation of 22 W. The MOSFET is also characterized by its low input capacitance of 1050 pF at 30 V, which contributes to its efficiency in switching applications.
Power Field-Effect Transistor, Product overview: SI7972DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7972DP-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 60V 8A (Tc) 22W Surface Mount PowerPAK® SO-8 Dual
Win Source Part Number: 1092946-SI7972DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power - Max: 22W
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI7972DP-T1-GE3CT-ND
Base Product Number: SI7972
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
DUAL MOSFET,N-CH, 60V, 8A, POWERPAK SO ROHS COMPLIANT: YES
MOSFET 2N-CH 60V 8A PPAK SO8
MOSFET 2 N-CH 30V POWERPAK SO8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7972DP-T1-GE3 | 742-SI7972DP-T1-GE3CT-ND | 1092946-SI7972DP-T1-GE3 | SI7972DP-T1-GE3 | 57AJ0473 | SI7972DP-T1-GE3 | SI7972DP-T1-GE3 |
| Product Name | MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | MOSFET | Dual Mosfet,n-Ch, 60V, 8A, Powerpak So Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Package Type | SO-8; PowerPAK® SO-8 Dual | SO-8; SOT3 | TO-3 | SO-8; PowerPAK® SO-8 Dual | |||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
