Vishay Intertechnology, Inc. FET, MOSFET Arrays SI7964DP-T1-GE3

Mosfet Array 2 N-Channel (Dual) 60V 6.1A 1.4W Surface Mount PowerPAK® SO-8 Dual

MOSFET 2N-CH 60V 6.1A PPAK SO-8 Product overview: SI7964DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7964DP-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 720351-SI7964DP-T1-GE3
Packaging: Tape and Reel
Mounting Style: SMD
FET Feature: Standard
Transistor Polarity: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerPAK SO-8 Dual
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8 Dual
Popularity: Low
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Family Part Number: SI7964
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Maximum Power: 1.4W
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 6.1A
Rds On (Maximum) at Id, Vgs: 23mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 65nC at 10V