Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7962DP-T1-E3 SI7962DP-T1-E3

Manufacturer: Vishay
Win Source Part Number: 128631-SI7962DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 7.1A
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 70nC @ 10V
Maximum Rds On at Id,Vgs: 17 mOhm @ 11.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 40V 7.1A PPAK SO8 Product overview: SI7962DP-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 7.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 7.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI7962DP-T1-E3 can be used for catalog matching and distributor lookup.