Manufacturer: Vishay
Win Source Part Number: 128631-SI7962DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 7.1A
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 70nC @ 10V
Maximum Rds On at Id,Vgs: 17 mOhm @ 11.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 40V 7.1A PPAK SO8
MOSFET 2N-CH 40V 7.1A PPAK SO8
MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 128631-SI7962DP-T1-E3 | SI7962DP-T1-E3TR-ND | SI7962DP-T1-E3 | SI7962DP-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7962DP-T1-E3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| V(BR)DSS | 40 volts | |||
| PD | 1400 milliwatts |
