Manufacturer: Vishay
Win Source Part Number: 028697-SI7960DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8 Dual
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 75nC @ 10V
Maximum Rds On at Id,Vgs: 21 mOhm @ 9.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 60V 6.2A 1.4W Surface Mount PowerPAK® SO-8 Dual
MOSFET 2N-CH 60V 6.2A PPAK SO8
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 028697-SI7960DP-T1-E3 | SI7960DP-T1-E3TR-ND | SI7960DP-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7960DP-T1-E3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| V(BR)DSS | 60 volts | ||
| PD | 1400 milliwatts |
