Manufacturer: Vishay
Win Source Part Number: 712149-SI7956DP-T1-G
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8 Dual
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 2.6A
Power - Max: 1.4W
Family Name: Si7956DP
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK SO-8 Dual
Drain Source Voltage: 150V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V
Rds On (Maximum) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
Introduction Date: May 26, 2004
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 150V 2.6A PPAK SO-8
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual
150V 2.6A N-CH JFET Transistor, 105mR Rds(on), Surface Mount Product overview: SI7956DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 150V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 150V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7956DP-T1-GE3 can be used for catalog matching and distributor lookup.
Dual N-Ch PowerPAK SO-8 150V 105mohm @ 1
Dual N-Ch PowerPAK SO-8 150V 105mohm @ 1
Dual N-Ch PowerPAK SO-8 150V 105mohm @ 1
MOSFET, DUAL N CHANNEL, 150V, 2.6A, POWERPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.088ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 150V, 2.6A, POWERPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.088ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
MOSFET, DUAL, N-CH/150V/2.6A/POWER
MOSFET 2N-CH 150V 2.6A PPAK SO8
150V 2.6A 105mΩ@10V,4.1A 1.4W 4V@250uA 2 N-Channel PowerPAK SO-8 MOSFETs ROHS
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 712149-SI7956DP-T1-GE3 | SI7956DP-T1-GE3 | SI7956DP-T1-GE3DKR-ND | 278-SI7956DP-T1-GE3 | 1807324 | 18X0028 | 57AJ0472 | SI7956DP-T1-GE3 | 17930-SI7956DP-T1-GE3 | SI7956DP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7956DP-T1-GE3 | FET, MOSFET Arrays | FET, MOSFET Arrays | SMD 150V 2.6A MOSFET Transistor | MOSFETs | Mosfet, Dual N Channel, 150V, 2.6A, Powerpak; Transistor Polarity Vishay | Mosfet, Dual, N-Ch/150V/2.6A/powerpak So Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 150V 2.6A 105mΩ@10V,4.1A 1.4W 4V@250uA 2 N-Channel PowerPAK SO-8 MOSFETs ROHS | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||||
| Package Type | SO-8; SOT3 | SO-8; PowerPAK® SO-8 Dual | SO-8; PowerPAK® SO-8 Dual | PowerPack | TO-3 | TO-3 | SO-8; PowerPAKR SO-8 Dual | |||
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
